The coordination number of a square close-packed structure in two dimensions is -
1. 2
2. 3
3. 4
4. 6
Doping causes-
1. Dislocation defect.
2. Schottky defect.
3. Frenkel defect.
4. Electronic defect.
Silicon doped with electron rich impurity forms -
1. p-type semiconductor.
2. n-type semiconductor.
3. Intrinsic semiconductor.
4. Insulator.
The incorrect statement among the following is:
1. | Paramagnetic substances are weakly attracted by magnetic field. |
2. | Ferromagnetic substances cannot be magnetised permanently. |
3. | The domains in antiferromagnetic substances are oppositely oriented with respect to each other. |
4. | Pairing of electrons cancels their magnetic moment in the diamagnetic substances. |
A ferromagnetic substance becomes a permanent magnet when it is placed in a magnetic field because:
1. | All the domains get oriented in the direction of the magnetic field. |
2. | All the domains get oriented in the direction opposite to the direction of the magnetic field. |
3. | Domains get oriented randomly. |
4. | Domains are not affected by the magnetic field. |
The correct order of the packing efficiency in different types of unit cells is-
1. Fcc < Bcc < Simple cubic
2. Fcc > Bcc > Simple cubic
3. Fcc < Bcc > Simple cubic
4. Bcc < Fcc > Simple cubic
Dislocation defect is also known as-
1. Frenkel defect.
2. Schottky defect.
3. Non-stoichiometric defect.
4. Simple interstitial defect.
The edge lengths of the unit cells in terms of the radius of spheres constituting fcc, bcc, and simple cubic unit cells are respectively -
1.
2.
3.
4.
Correct statement among the following regarding conductivity in solids is -
1.
2.
3.
4.
Consider the following statements about semiconductors.
I. | Silicon doped with electron-rich impurity is a p-type semiconductor. |
II. | Silicon doped with an electron-rich impurity is an n-type semiconductor. |
III. | Delocalised electrons increase the conductivity of doped silicon. |
IV. | An electron vacancy increases the conductivity of n-type semiconductor. |
1. I and II
2. II and III
3. III and IV
4. I and IV