Nickel oxide has the formula Ni0.98O1.00. The fraction of nickel existing as Ni3+ ions will be -
1. 0.041
2. 0.959
3. 0.736
4. 0.264
Higher conductivity of p-type and n-type semiconductors is due to:
1. | Increase in the number of positive holes and mobile electrons respectively. |
2. | Increase in the number of electrons in both types of semiconductors. |
3. | Increase in the number of positive-holes in both types of semiconductors. |
4. | None of the above. |
(i) Ge is doped with In
(ii) Si is doped with B.
The semiconductors formed in the above cases are :
1. (i) n-type semiconductor (ii) p-type semiconductor .
2. (i) p-type semiconductor (ii) n-type semiconductor .
3. p-type semiconductor in both the cases.
4. n-type semiconductor in both the cases.
NaCl is doped with 10−3 mol % of SrCl2. The number of cation vacancies post doping would be -
1. 4.022 × 108
2. 5.022 × 1018
3. 6.022 × 1018
4. 7.022 × 108
The correct statement among the following is -
1. | Semiconductors have a small energy gap between the valence band and the conduction band. |
2. | Conductors have overlapped valence band and conduction band. |
3. | Insulators have a large energy gap between the valence band and conduction band. |
4. | All of the above. |
A defect that has an equal number of missing cations and anions is:
1. Schottky defect.
2. Frenkel defect.
3. Both (1) and (2)
4. None of the above.