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Q. No.In half-wave rectification, if the input frequency is \(60\) Hz, the output frequency will be:
1.
\(120\) Hz
2.
zero
3.
\(30\) Hz
4.
\(60\) Hz
Subtopic: Rectifier |
68%
Level 2: 60%+
NEET - 2022
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As the temperature increases, the electrical resistance:
| 1. | decreases for conductors but increases for semiconductors. |
| 2. | increases for both conductors and semiconductors. |
| 3. | decreases for both conductors and semiconductors. |
| 4. | increases for conductors but decreases for semiconductors. |
Subtopic: Energy Band theory |
75%
Level 2: 60%+
NEET - 2022
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In the given circuits \((a),\) \((b),\) and \((c),\) the potential drop across the two \({\mathrm{p\text-n}}\) junctions is equal in:
| 1. | both circuits \((a)\) and \((c)\) |
| 2. | circuit \((a)\) only |
| 3. | circuit \((b)\) only |
| 4. | circuit \((c)\) only |
Subtopic: PN junction |
65%
Level 2: 60%+
NEET - 2022
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The circuit represents a full wave bridge rectifier when switch \(S\) is open. The output voltage \((V_0)\) pattern across \(R_L\) when \(S\) is closed:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: Rectifier |
Level 3: 35%-60%
NEET - 2022
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A full wave rectifier circuit consists of two \(\mathrm{p\text-n}\) junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?
1. load resistance
2. a centre-tapped transformer
3. \(\mathrm{p\text-n}\) junction diodes
4. capacitor
1. load resistance
2. a centre-tapped transformer
3. \(\mathrm{p\text-n}\) junction diodes
4. capacitor
Subtopic: Rectifier |
58%
Level 3: 35%-60%
NEET - 2023
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A \(\mathrm{p} \text-\)type extrinsic semiconductor is obtained when Germanium is doped with:
1. antimony
2. phosphorous
3. arsenic
4. boron
1. antimony
2. phosphorous
3. arsenic
4. boron
Subtopic: Types of Semiconductors |
76%
Level 2: 60%+
NEET - 2023
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The electron concentration in an \(\mathrm{n\text-}\)type semiconductor is the same as the hole concentration in a \(\mathrm{p\text{-}}\)type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
| 1. | current in \(\mathrm{n\text-}\)type \(>\) current in \(\mathrm{p\text{-}}\)type. |
| 2. | no current will flow in \(\mathrm{p\text{-}}\)type, current will only flow in \(\mathrm{n\text-}\)type. |
| 3. | current in \(\mathrm{n\text-}\)type \(=\) current in \(\mathrm{p\text{-}}\)type. |
| 4. | current in \(\mathrm{p\text{-}}\)type \(>\) current in \(\mathrm{n\text-}\)type. |
Subtopic: Types of Semiconductors |
52%
Level 3: 35%-60%
NEET - 2021
Hints
The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
| 1. | diode design | 2. | temperature |
| 3. | forward bias | 4. | doping density |
Subtopic: PN junction |
75%
Level 2: 60%+
AIPMT - 2003
Hints
Reverse bias applied to a junction diode:
| 1. | lowers the potential barrier |
| 2. | raises the potential barrier |
| 3. | increases the majority carrier current |
| 4. | increases the minority carrier's current |
Subtopic: PN junction |
75%
Level 2: 60%+
AIPMT - 2003
Hints
For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?
| 1. | In F.B. the voltage across \(R\) is \(V.\) |
| 2. | In R.B. the voltage across \(R\) is \(V.\) |
| 3. | In F.B. the voltage across \(R\) is \(2V.\) |
| 4. | In R.B. the voltage across \(R\) is \(2V.\) |
Subtopic: PN junction |
81%
Level 1: 80%+
AIPMT - 2002
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