Match the items in List-I with their corresponding descriptions in List-II:
List-I List-II
(a) Intrinsic semiconductor (e) Prepared by adding phosphorus
(b) \(\mathrm{n}\text-\)type semiconductor (f) The width is nearly one micron
(c) \(\mathrm{p}\text-\)type semiconductor (g) Silicon
(d) Depletion layer (h) Prepared by adding indium

Codes:
1. (a)-(g), (b)-(e), (c)-(h), (d)-(f)
2. (a)-(h), (b)-(f), (c)-(e), (d)-(g)
3. (a)-(e), (b)-(g), (c)-(f), (d)-(h)
4. (a)-(f), (b)-(h), (c)-(g), (d)-(e)
Subtopic:  Types of Semiconductors |
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Suitable impurities are added to a semiconductor depending on its use. This is to:
 
1. increase its electrical resistivity
2. increase its electrical conductivity
3. increase its life
4. enable it to tolerate higher voltage
Subtopic:  Types of Semiconductors |
 90%
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A semiconductor is known to have an electron concentration of \(8\times 10^{13}~\text{cm}^{-3},\) and a hole concentration of \(5\times 10^{2}~\text{cm}^{-3}.\) The semiconductor is:

1. \(\mathrm{n}\text-\)type 2. \(\mathrm{p}\text-\)type
3. intrinsic 4. insulator
Subtopic:  Types of Semiconductors |
 87%
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Hole is:

1. an anti-particle of electron.
2. a vacancy created when an electron leaves a covalent bond.
3. absence of free electrons.
4. an artificially created particle.

Subtopic:  Types of Semiconductors |
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A \(\mathrm{Ge}\) specimen is doped with \(\mathrm{Al}.\) The concentration of acceptor atoms is approximately \(10^{24}~\text{m}^{-3}.\) Given that intrinsic carrier concentration is nearly \(10^{19}~\text{m}^{-3},\) then the concentration of electrons in the specimen is nearly:
1. \(10^{10}~\text{m}^{-3}\)
2. \(10^{14}~\text{m}^{-3}\)
3. \(10^{19}~\text{m}^{-3}\)
4. \(10^{18}~\text{m}^{-3}\)
Subtopic:  Types of Semiconductors |
 84%
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To make ordinary silicon into a \(\mathrm{p\text-}\)type semiconductor, you might add to it:
1. Indium 2. Antimony
3. Germanium 4. Carbon
Subtopic:  Types of Semiconductors |
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If a small amount of aluminium is added to the silicon crystal:

1. its resistance decreases.
2. it becomes a \(\mathrm{p\text-}\)type semiconductor.
3. there will be fewer free electrons than holes in the semiconductor.
4. All of these are correct.
Subtopic:  Types of Semiconductors |
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An intrinsic Germanium \(\mathrm{(Ge)}\) semiconductor having \(2.5 \times 10^{29}\) atoms per \(\text m^3\) is doped uniformly by trivalent aluminium at \(1~\text{ppm}.\)If the thermally generated electron concentration at room temperature is \(n_i=10^{17}/\text m^3,\) the resulting electron concentration after doping at the same temperature will be:
1. \(2.5 \times 10^{29}~\text m^{-3}\)
2. \(4 \times 10^{10}~\text m^{-3}\)
3. \(2.5 \times 10^{18}~\text m^{-3}\)
4. \(4 \times 10^{20}~\text m^{-3}\) 
Subtopic:  Types of Semiconductors |
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The charge on a \(\mathrm{p}\)-type semiconductor is:
 
1. neutral 
2. negative
3. positive
4. may be positive or negative
Subtopic:  Types of Semiconductors |
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Pure \(\mathrm{Si}\) at \(500~\text K\)  has an equal number of electrons \((n_i)\) and the hole \((n_h)\) concentration of \(1.5\times10^{16}~\text{m}^{-3}.\) Doping by indium increases the hole concentration \(n_h\) to \(4.5\times 10^{22}~\text{m}^{-3}.\) The doped semiconductor is of:
1. \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=5\times10^{22}~\text{m}^{-3}\)
2. \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=2.5\times10^{23}~\text{m}^{-3}\)
3. \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=2.5\times10^{10}~\text{m}^{-3}\)
4. \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=5\times10^{9}~\text{m}^{-3}\)
Subtopic:  Types of Semiconductors |
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