List-I | List-II | ||
(a) | Intrinsic semiconductor | (e) | Prepared by adding phosphorus |
(b) | \(\mathrm{n}\text-\)type semiconductor | (f) | The width is nearly one micron |
(c) | \(\mathrm{p}\text-\)type semiconductor | (g) | Silicon |
(d) | Depletion layer | (h) | Prepared by adding indium |
1. | (a)-(g), (b)-(e), (c)-(h), (d)-(f) |
2. | (a)-(h), (b)-(f), (c)-(e), (d)-(g) |
3. | (a)-(e), (b)-(g), (c)-(f), (d)-(h) |
4. | (a)-(f), (b)-(h), (c)-(g), (d)-(e) |
1. | increase its electrical resistivity |
2. | increase its electrical conductivity |
3. | increase its life |
4. | enable it to tolerate higher voltage |
A semiconductor is known to have an electron concentration of \(8\times 10^{13}~\text{cm}^{-3},\) and a hole concentration of \(5\times 10^{2}~\text{cm}^{-3}.\) The semiconductor is:
1. | \(\mathrm{n}\text-\)type | 2. | \(\mathrm{p}\text-\)type |
3. | intrinsic | 4. | insulator |
Hole is:
1. | an anti-particle of electron. |
2. | a vacancy created when an electron leaves a covalent bond. |
3. | absence of free electrons. |
4. | an artificially created particle. |
1. | Indium | 2. | Antimony |
3. | Germanium | 4. | Carbon |
If a small amount of aluminium is added to the silicon crystal:
1. | its resistance decreases. |
2. | it becomes a \(\mathrm{p\text-}\)type semiconductor. |
3. | there will be fewer free electrons than holes in the semiconductor. |
4. | All of these are correct. |
1. | neutral |
2. | negative |
3. | positive |
4. | may be positive or negative |
1. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=5\times10^{22}~\text{m}^{-3}\) |
2. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=2.5\times10^{23}~\text{m}^{-3}\) |
3. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=2.5\times10^{10}~\text{m}^{-3}\) |
4. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=5\times10^{9}~\text{m}^{-3}\) |