Q. No.If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\)
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)
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The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be:
| 1. | 2.5 A | 2. | 10.0 A |
| 3. | 1.43 A | 4. | 3.13 A |
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What is the reading of the ideal ammeters A1 and A2 connected in the given circuit diagram, if junction diodes are ideal?
1. 2 A and zero
2. 3 A and 2 A
3. 2 A and 3 A
4. Zero and 2 A
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Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
| 1. |  |
2. |  |
| 3. |  |
4. |  |
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A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is m wide, the intensity of the electric field in this region is:
| 1. | \(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) | 2. | \(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) |
| 3. | \(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) | 4. | \(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) |
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For the given circuit of the P-N junction diode, which of the following statements is correct?
| 1. | In F.B. the voltage across R is V. |
| 2. | In R.B. the voltage across R is V. |
| 3. | In F.B. the voltage across R is 2V. |
| 4. | In R.B. the voltage across R is 2V. |
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Reverse-bias applied to a junction diode:
| 1. | lowers the potential barrier |
| 2. | raises the potential barrier |
| 3. | increases the majority carrier current |
| 4. | increases the minority carrier's current |
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The depletion layer in the P–N junction region is caused by:
| 1. | the drift of holes |
| 2. | diffusion of charge carriers |
| 3. | migration of impurity ions |
| 4. | drift of electrons |
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The barrier potential of a p-n junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density
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When a forward bias is applied to a p-n junction, then what happens to the potential barrier , and the width of charge depleted region x?
| 1. | \(V_B\) increases, x decreases | 2. | \(V_B\) decreases, x increases |
| 3. | \(V_B\) increases, x increases | 4. | \(V_B\) decreases, x decreases |
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