In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
1. | p-type semiconductor |
2. | insulator |
3. | metal |
4. | n-type semiconductor |
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Identify the incorrect statement from the following:
1. | The resistivity of a semiconductor increases with an increase in temperature. |
2. | Substances with an energy gap of the order of 10 eV are insulators. |
3. | In conductors, the valence and conduction bands may overlap. |
4. | The conductivity of a semiconductor increases with an increase in temperature. |
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Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by \(\left(E_g\right)_C,(E_g)_{Si}~\text{and}~(E_g)_{Ge}\) respectively. Which one of the following relationships is true in their case?
1. | \(\left(E_g\right)_C<\left(E_g\right)_{G e} \) | 2. | \(\left(E_g\right)_C>\left(E_g\right)_{S i} \) |
3. | \(\left(E_g\right)_C=\left(E_g\right)_{S i} \) | 4. | \(\left(E_g\right)_C<\left(E_g\right)_{S i}\) |
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\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:
1. | in the case of \(C\), the valence band is not completely filled at absolute zero temperature. |
2. | in the case of \(C\), the conduction band is partly filled even at absolute zero temperature. |
3. | the four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\), they lie in the third. |
4. | the four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\), they lie in the fourth orbit. |
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