\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:
1. | in the case of \(C\), the valence band is not completely filled at absolute zero temperature. |
2. | in the case of \(C\), the conduction band is partly filled even at absolute zero temperature. |
3. | the four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\), they lie in the third. |
4. | the four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\), they lie in the fourth orbit. |
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The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
1. \(\mathrm{OR}\) gate
2. \(\mathrm{NOR}\) gate
3. \(\mathrm{AND}\) gate
4. \(\mathrm{NAND}\) gate
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Zener breakdown will occur if:
1. impurity level is low.
2. impurity level is high.
3. impurity is less on the n-side.
4. impurity is less on the p-side.
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In the circuit shown in the figure, the maximum output voltage Vo is:
1. 0 V
2. 5 V
3. 10 V
4.
If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\)
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)
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An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)
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The correct symbol for zener diode is:
1. | 2. | ||
3. | 4. |
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The electrical circuit used to get smooth output from a rectifier circuit is called:
1. oscillator.
2. filter.
3. amplifier.
4. logic gates.
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A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is m wide, the intensity of the electric field in this region is:
1. | \(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) | 2. | \(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) |
3. | \(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) | 4. | \(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) |
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