Which logic gate is represented by the following combination of logic gates?
         
1. OR
2. NAND
3. AND
4. NOR

Subtopic:  Logic gates |
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NEET - 2015
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In a \(\mathrm{p\text-n}\) junction diode not connected to any circuit:
1. the potential is the same everywhere.
2. the \(\mathrm{p}\text-\)type is at higher potential than the \(\mathrm{n}\text-\)type side.
3. there is an electric field at the junction directed from the \(\mathrm{n}\text-\)type side to the \(\mathrm{p}\text-\)type side.
4. there is an electric field at the junction directed from the \(\mathrm{p}\text-\)type side to the \(\mathrm{n}\text-\)type side.
Subtopic:  PN junction |
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When a forward bias is applied to a \(\mathrm{p\text-n}\) junction, then what happens to the potential barrier \(V_B,\) and the width of charge depleted region \(x\)?
1. \(V_B\) increases, \(x\) decreases 2. \(V_B\) decreases, \(x\) increases
3. \(V_B\)  increases, \(x\) increases 4. \(V_B\) decreases, \(x\) decreases
Subtopic:  PN junction |
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When the NPN transistor is used as an amplifier:
1. the electrons move from base to collector.
2. the holes move from emitter to base.
3. the electrons move from collector to base.
4. the holes move from collector to emitter.

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The transfer ratio of a transistor is 50. The input resistance of the transistor when used in the common-emitter configuration is 1 kΩ. The peak value for an A.C input voltage of 0.01 V peak is:

1. 100 μA

2. 0.01 mA

3. 0.25 mA

4. 500 μA

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Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?

1. 2.
3. 4.
Subtopic:  Energy Band theory |
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The current through an ideal \(\mathrm{p\text-n}\) junction diode shown in the circuit will be:

 

1. \(5~\text A\)  2. \(0.2~\text A\) 
3. \(0.6~\text A\)  4. zero
Subtopic:  PN junction |
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Use of transistor as an amplifier works in the:

1.  Cut off region

2.  Saturation region

3.  Passive region

4.  Active region

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When a transistor is used as a switch, it is in:

1.  active state.

2.  cut-off state.

3.  saturation state.

4.  both cut-off and saturation states are possible.

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A potential barrier of \(0.50~\text V\) exists across a \(\mathrm{p\text-n}\) junction. If the depletion region is \(5.0\times10^{-7}~\text{m}\) wide, the intensity of the electric field in this region is:
1. \(1.0 \times 10^6 ~\text{V/m}\) 2. \(1.0 \times 10^5 ~\text{V/m}\)
3. \(2.0 \times 10^5 ~\text{V/m}\) 4. \(2.0 \times 10^6 ~\text{V/m}\)
Subtopic:  PN junction |
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