For a common emitter circuit if $\frac{I_C}{I_E}$ $=$ $0.98$ then the current gain for the common emitter circuit will be:
1.  49
2.  98
3.  4.9
4.  25.5

An n-p-n transistor conducts when:
 

The output characteristics of a transistor are shown in the figure. When $V_{CE}$ is \(10\) V and $I_C$  = \(4.0\) mA, the value of ${\beta }_{ac}$ is:

1. \(200\)
2. \(250\)
3. \(150\)
4. \(100\)

The output characteristics of a transistor are shown in the figure. When $V_{CE}$ is 10 V and $I_C$  = 4.0 mA, the value of ${\beta }_{dc}$ is:

1. 200

2. 250

3. 300

4. 150

For a Silicon CE transistor amplifier, the audio signal voltage across the collector resistance of 2.0 k$\Omega$ is 2.0 V. Suppose the current amplification factor of the transistor is 100, what should be the value of ${\mathrm{R<mspace\; width="1em"></mspace>}}_{}$ in series with the supply of 2.0 V if the dc base current has to be 10 times the signal current?

$1.<mspace\; width="1em"></mspace>18<mspace\; width="1em"></mspace>k\Omega$
$2.<mspace\; width="1em"></mspace>16<mspace\; width="1em"></mspace>k\Omega$
$3.<mspace\; width="1em"></mspace>12<mspace\; width="1em"></mspace>k\Omega$
$4.<mspace\; width="1em"></mspace>14<mspace\; width="1em"></mspace>k\Omega$

For a Silicon CE transistor amplifier, the audio signal voltage across the collector resistance of 2.0 k$\Omega$ is 2.0 V. Suppose the current amplification factor of the transistor is 100 if the dc base current has to be 10 times the signal current. The dc current across through the collector resistance will be:

1. 0.1 mA

2. 10 mA

3. 1.0 mA

4. 0.01 mA

In figure, the $V_{BB}$ supply can be varied from 0 V to 5.0 V. The Si transistor has ${\beta }_{dc}$ = 250 and $R_B$= 100 k$\Omega$, $R_C$ = 1 K$\Omega$, $V_{CC}$= 5.0 V. Assume that when the transistor is saturated, $V_{CE}$ = 0 V and $V_{BE}$= 0.8V. The minimum base current, for which the transistor will reach saturation is:

 $1.<mspace\; width="1em"></mspace>20<mspace\; width="1em"></mspace>\mu A$
$2.<mspace\; width="1em"></mspace>5<mspace\; width="1em"></mspace>mA$
$3.<mspace\; width="1em"></mspace>20<mspace\; width="1em"></mspace>mA$
$4.<mspace\; width="1em"></mspace>5<mspace\; width="1em"></mspace>\mu A$

In figure, the $V_{BB}$ supply can be varied from 0 V to 5.0 V. The Si transistor has ${\beta }_{dc}$ = 250 and $R_B$= 100 k$\Omega$, $R_C$ = 1 K$\Omega$, $V_{CC}$= 5.0 V. Assume that when the transistor is saturated, $V_{CE}$ = 0 V and $V_{BE}$= 0.8V. The input voltage for which the transistor will reach saturation is:

1. 0.8 V 

2. 5.0 V

3. 2.8 V

4. 1.4 V

For a transistor $\frac{{\mathrm{I}}_{\mathrm{C}}}{{\mathrm{I}}_{\mathrm{E}}}=0.96$, the current gain for a common emitter configuration will be:
1. \(12\)
2. \(6\)
3. \(48\)
4. \(24\)

If a common emitter circuit is used as an amplifier, its current gain is \(50.\) If input resistance is \(1\) kΩ and input voltage is \(5\) V, then output current will be:
1. \(250\) mA
2. \(30\) mA
3. \(50\) mA
4. \(100\) mA