The electron concentration in an \(\mathrm{n\text-}\)type semiconductor is the same as the hole concentration in a \(\mathrm{p\text{-}}\)type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
1. | current in \(\mathrm{n\text-}\)type \(>\) current in \(\mathrm{p\text{-}}\)type. |
2. | no current will flow in \(\mathrm{p\text{-}}\)type, current will only flow in \(\mathrm{n\text-}\)type. |
3. | current in \(\mathrm{n\text-}\)type \(=\) current in \(\mathrm{p\text{-}}\)type. |
4. | current in \(\mathrm{p\text{-}}\)type \(>\) current in \(\mathrm{n\text-}\)type. |
Consider the following Statements (A) and (B) and identify the correct answer.
(A) | A Zener diode is connected in reverse bias when used as a voltage regulator. |
(B) | The potential barrier of p-n junction lies between \(0.2\) V to \(0.3\) V. |
1. | (A) is correct and (B) is incorrect. |
2. | (A) is incorrect and (B) is correct. |
3. | (A) and (B) both are correct. |
4. | (A) and (B) both are incorrect. |
For the given circuit, the input digital signals are applied at the terminals \(A\), \(B\) and \(C\). What would be the output at terminal \(Y\)?
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An intrinsic semiconductor is converted into an \(\mathrm{n\text{-}}\)type extrinsic semiconductor by doping it with:
1. | phosphorous | 2. | aluminium |
3. | silver | 4. | germanium |
Which of the following gate is called the universal gate?
1. \(\mathrm{OR}\) gate
2. \(\mathrm{AND}\) gate
3. \(\mathrm{NAND}\) gate
4. \(\mathrm{NOT}\) gate
Out of the following which one is a forward-biased diode?
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4. |
1. | decreases for conductors but increases for semiconductors |
2. | increases for both conductors and semiconductors |
3. | decreases for both conductors and semiconductors |
4. | increases for conductors but decreases for semiconductors |
1. | both circuits (a) and (c) |
2. | circuit (a) only |
3. | circuit (b) only |
4. | circuit (c) only |
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