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Q. No.In a half-wave rectification, what is the output frequency if the input frequency is \(50~\text{Hz}?\)
1. \(50~\text{Hz}\)
2. \(100~\text{Hz}\)
3. \(25~\text{Hz}\)
4. \(60~\text{Hz}\)
1. \(50~\text{Hz}\)
2. \(100~\text{Hz}\)
3. \(25~\text{Hz}\)
4. \(60~\text{Hz}\)
Subtopic: Rectifier |
75%
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If the input to the NOT gate is \(A\), its output is:
1. \(0\)
2. \(1\)
3. \(A\)
4. \(\overline{A}\)
Subtopic: Logic gates |
85%
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A half-wave rectifier voltage is fed to a load resistor. For which part of the cycle, the load current will flow?
| 1. | \(0^\circ-90^\circ\) | 2. | \(90^\circ-180^\circ\) |
| 3. | \(0^\circ-180^\circ\) | 4. | \(0^\circ-360^\circ\) |
Subtopic: Rectifier |
54%
From NCERT
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A forward-biased diode is treated as:
| 1. | an open switch with infinite resistance. |
| 2. | a closed switch with a voltage drop of \(0\) V. |
| 3. | a closed switch in series with a battery with voltage of \(0.7\) V. |
| 4. | a closed switch in series with small resistance and a battery. |
Subtopic: PN junction |
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In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
| 1. | \(\mathrm{p}\text-\)type semiconductor |
| 2. | insulator |
| 3. | metal |
| 4. | \(\mathrm{n}\text-\)type semiconductor |
Subtopic: Energy Band theory |
76%
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AIPMT - 2007
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The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
| 1. | \(2.5~\text A\) | 2. | \(10.0~\text A\) |
| 3. | \(1.43~\text A\) | 4. | \(3.13~\text A\) |
Subtopic: PN junction |
88%
From NCERT
NEET - 2016
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The combination of gates shown below is equivalent to:
1. AND gate
2. XOR gate
3. NOR gate
4. NAND gate
Subtopic: Logic gates |
71%
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In the given circuit, \(\mathrm{p\text-n}\) junction diodes \(D_1, D_2~\text{and}~D_3\) are ideal. For the following potential of \(A\) and \(B\), the correct increasing order of resistance between \(A\) and \(B\) will be:
ii. \(-5~\text{V}, -10~\text{V}\)
iii. \(-4~\text{V}, -12~\text{V}\)
ii. \(-5~\text{V}, -10~\text{V}\)
iii. \(-4~\text{V}, -12~\text{V}\)
| 1. | (i) < (ii) < (iii) | 2. | (iii) < (ii) < (i) |
| 3. | (ii) = (iii) < (i) | 4. | (i) = (iii) < (ii) |
Subtopic: PN junction |
64%
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The depletion layer in the \(\mathrm{p\text-n}\) junction region is caused by:
| 1. | the drift of holes. |
| 2. | diffusion of charge carriers. |
| 3. | migration of impurity ions. |
| 4. | drift of electrons. |
Subtopic: PN junction |
79%
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Subtopic: Applications of PN junction |
52%
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