In a \(\mathrm{p\text{-}n}\) junction diode, the change in temperature due to heating:

1.	affects only reverse resistance.
2.	affects only forward bias.
3.	does not affect the resistance of the \(\mathrm{p\text{-}n}\) junction.
4.	affects the overall \(\mathrm{V\text{-}I}\) characteristics of a \(\mathrm{p\text{-}n}\) junction.

The given electrical network is equivalent to:
   

Which one of the following represents the forward bias diode?

1.
2.
3.
4.

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
   
1. \(2.5~\text{A}\)
2. \(10.0~\text{A}\)
3. \(1.43~\text{A}\)
4. \(3.13~\text{A}\)

What is the output \(Y\) in the following circuit, when all the three inputs \(A\), \(B\), and \(C\) are first \(0\) and then \(1\)? 
                          

To get output \(Y=1\) for the following circuit, the correct choice for the input is:
  

Consider the junction diode as an ideal. The value of current flowing through \(AB\) is: 
   
1. \(10^{-2}~\text{A}\)
2. \(10^{-1}~\text{A}\)
3. \(10^{-3}~\text{A}\)
4. \(0~\text{A}\)

In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\)$$ and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
  
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)

If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown, 

 
then the output across \(R_L\) will be:

1.		2.
3.		4.

Which logic gate is represented by the following combination of logic gates? 

    

1. \(\mathrm{OR}\)
2. \(\mathrm{NAND}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NOR}\)