The shows two NAND gates followed by a NOR gate. The system is equivalent to the following logic gate

(a) OR
(b) AND
(c) NAND
(d) None of these

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The diagram of a logic circuit is given below. The output F of the circuit is represented by

(a) W(X+Y)
(b) W.(X.Y)
(c) W+(X.Y)
(d) W+(X+Y)

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The combination of gates shown below produces


(a) AND gate
(b) XOR gate
(c) NOR gate
(d) NAND gate

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Figure gives a system of logic gates. From the study of truth table it can be found that to produce a high output (1) at R, we must have

(a) X = 0, Y = 1
(b) X = 1, Y = 1
(c) X = 1, Y = 0
(d) X = 0, Y = 0

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The following configuration of gate is equivalent to

(a) NAND
(b) XOR
(c) OR
(d) None of these

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For the transistor circuit shown below, if β = 100, voltage drop between emitter and base is 0.7 V, then value of VCE will be :

(a) 10 V
(b) 5 V
(c) 13 V
(d) 0 V

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In the following circuit, find I1 and I2.

(a) 0, 0
(b) 5 mA, 5 mA
(c) 5 mA, 0
(d) 0, 5 mA

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Applications of PN junction
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In the circuit shown in the figure, the maximum output voltage V0 is :

1. 0 V                        2. 5 V
3. 10 V                      4. 52 

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Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the valve of V0 changes by 

(a) 0.2 V                    (b) 0.4 V
(c) 0.6 V                    (d) 0.8 V

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The contribution in the total current flowing through a semiconductor due to electrons and holes are 34 and 14 respectively. If the drift velocity of electrons is 52 times that of holes at this temperature, then the ratio of concentration of electrons and holes is
(a) 6 : 5                 (b) 5 : 6
(c) 3 : 2                 (d) 2 : 3

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Types of semiconductors
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