The energy band diagrams for three semiconductor samples of silicon are as shown. We can then assert that

(a) Sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively
(b) Sample X is undoped while both samples Y and Z have been doped with a fifth group impurity
(c) Sample X has been doped with equal amounts of third and fifth group impurities while samples Y and Z are undoped
(d) Sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively

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Energy band theory
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In a semiconducting material, the mobilities of electrons and holes are μe and μh respectively. Which of the following is true?
(a) μe>μh               (b)  μe<μh
(c)  μeμh             (d)  μe<0; μh>0

Concept Questions :-

Types of semiconductors
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The temperature (T) dependence of resistivity (ρ) of a semiconductor is represented by

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Types of semiconductors
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In a forward biased PN-junction diode, the potential barrier in the depletion region is of the form

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Different voltages are applied across a P-N junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current

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If the following input signal is sent through a PN-junction diode, then the output signal across RL will be

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The curve between charge density and distance near P-N junction will be

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The resistance of a germanium junction diode whose is shown in figure is Vk=0.3V


(a) 5 kΩ
(b) 0.2 kΩ
(c) 2.3 kΩ
(d) 102.3

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In the half-wave rectifier circuit shown. Which one of the following wave forms is true for VCD, the output across C and D?

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A full-wave rectifier circuit along with the input and output voltages is shown in the figure.

The contribution to the output voltage from diode – 2 is :

(a) A, C                       (b) B, D
(c) B, C                       (d) A, D

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