In a transistor circuit shown here the base current is 35 μA. The value of the resistor Rb is

(a) 123.5 kΩ
(b) 257 kΩ
(c) 380.05 kΩ 
(d) None of these

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For a transistor, in a common emitter arrangement, the alternating current gain β is given by

(a) β=IcIBVC                       (b) β=IBICVC

(c) β=IcIEVC                       (d) β=IEICVC

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The relation between α and β parameters of current gains for a transistors is given by

(a) α=β1-β                (b) α=β1+β

(c) α=1-ββ                (d) α=1+ββ

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In the CB mode of a transistor, when the collector voltage is changed by 0.5 volt. The collector current changes by 0.05 mA. The output resistance will be 
(a) 10 kΩ                         (b) 20 kΩ
(c) 5 kΩ                           (d) 2.5 kΩ

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Consider an NPN transistor amplifier in the common-emitter configuration. The current gain of the transistor is 100. If the collector current changes by 1 mA, what will be the change in emitter current?
(a) 1.1 mA                     (b) 1.01 mA
(c) 0.01 mA                    (d) 10 mA

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In a common base amplifier the phase difference between the input signal voltage and the output voltage is

(a) 0                      (b) π/4

(c)π/2                   (d) π

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In NPN transistor the collector current is 10 mA. If 90% of electrons emitted reach the collector, then

(a) Emitter current will be 9 mA
(b) Emitter current will be 11.1 mA
(c) Base current will be 0.1 mA
(d) Base current will be 0.01 mA

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In a transistor in CE configuration, the ratio of power gain to voltage gain is 
(a) α                                      (b) β/α 
(c) βα                                     (d) β 

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Given below are symbols for some logic gates

The XOR gate and NOR gate respectively are 
(a) 1 and 2                  (b) 2 and 3
(c) 3 and 4                  (d) 1 and 4

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Given below are four logic gate symbol (figure). Those for OR, NOR and NAND are respectively 

(a) 1, 4, 3                     (b) 4, 1, 2
(c) 1, 3, 4                     (d) 4, 2, 1

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