A common emitter amplifier is designed with NPN transistor (α = 0.99). The input impedance is 1 KΩ and load is 10 KΩ. The voltage gain will be 

(a) 9.9                           (b) 99
(c) 990                          (d) 9900

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Applications of Transistor
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The symbol given in figure represents 

(a) NPN transistor
(b) PNP transistor
(c) Forward biased PN junction diode
(d) Reverse biased NP junction diode

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The most commonly used material for making transistor is

(a) Copper                 (b) Silicon
(c) Ebonite                 (d) Silver

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An NPN-transistor circuit is arranged as shown in figure. It is
 

(a) A common base amplifier circuit
(b) A common emitter amplifier circuit
(c) A common collector amplifier circuit
(d) Neither of the above

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The part of a transistor which is heavily doped to produce a large number of majority carriers, is 

(a) Base                 (b) Emitter
(c) Collector            (d) None of these

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For a transistor, the current amplification factor is 0.8. The transistor is connected in common emitter configuration. The change in the collector current when the base current changes by 6 mA is 
(a) 6 mA                       (b) 4.8 mA
(c) 24 mA                     (d) 8 mA

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In a common base amplifier circuit, calculate the change in base current if that in the emitter current is 2 mA and α = 0.98

(a) 0.04 mA                           (b) 1.96 mA
(c) 0.98 mA                           (d) 2 mA

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In a transistor circuit shown here the base current is 35 μA. The value of the resistor Rb is

(a) 123.5 kΩ
(b) 257 kΩ
(c) 380.05 kΩ 
(d) None of these

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For a transistor, in a common emitter arrangement, the alternating current gain β is given by

(a) β=IcIBVC                       (b) β=IBICVC

(c) β=IcIEVC                       (d) β=IEICVC

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The relation between α and β parameters of current gains for a transistors is given by

(a) α=β1-β                (b) α=β1+β

(c) α=1-ββ                (d) α=1+ββ

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