The resistance of a reverse biased P-N junction diode is about 
(a) 1 ohm                        (b) 102ohm
(c) 103 ohm                     (d) 106 ohm

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Avalanche breakdown is due to 

(a) Collision of minority charge carrier

(b) Increase in depletion layer thickness

(c) Decrease in depletion layer thickness

(d) None of these

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Energy band theory
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Zener breakdown in a semi-conductor diode occurs when

(a) Forward current exceeds certain value

(b) Reverse bias exceeds certain value

(c) Forward bias exceeds certain value

(d) Potential barrier is reduced to zero

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Applications of PN junction
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When forward bias is applied to a P-N junction, then what happens to the potential barrier VB, and the width of charge depleted region x

(a) VB increases, x decreases

(b) VB decreases, x increases

(c) VB increases, x increases

(d) VB decreases, x decreases

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Function of rectifier is 

(a) To convert ac into dc             (b) To convert dc into ac
(c) Both (a) and (b)                   (d) None of these

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When the P end of P-N junction is connected to the negative terminal of the battery and the N end to the positive terminal of the battery, then the P-N junction behaves like 

(a) A conductor                       (b) An insulator
(c) A super-conductor              (d) A semi-conductor

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Applications of PN junction
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A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 5.0×10-7m wide, the intensity of the electric field in this region is 
(a) 1.0×106 V/m                      (b) 1.0×105 V/m
(c) 2.0×105 V/m                      (d) 2.0×106 V/m

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If no external voltage is applied across P-N junction, there would be 

(a) No electric field across the junction

(b) An electric field pointing from N-type to P-type side across the junction

(c) An electric field pointing from P-type to N-type side across the junction

(d) A temporary electric field during formation of P-N junction that would subsequently disappear

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Barrier potential of a P-N junction diode does not depend on 

(a) Temperature                (b) Forward bias
(c) Doping density             (d) Diode design

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Which is the correct diagram of a half-wave rectifier

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