Which one is reverse-biased

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Applications of PN junction
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Which one is in forward bias

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The reason of current flow in P-N junction in forward bias is

(a) Drifting of charge carriers

(b) Minority charge carriers

(c) Diffusion of charge carriers

(d) All of these

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The resistance of a reverse biased P-N junction diode is about 
(a) 1 ohm                        (b) 102ohm
(c) 103 ohm                     (d) 106 ohm

Concept Questions :-

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Avalanche breakdown is due to 

(a) Collision of minority charge carrier

(b) Increase in depletion layer thickness

(c) Decrease in depletion layer thickness

(d) None of these

Concept Questions :-

Energy band theory
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Zener breakdown in a semi-conductor diode occurs when

(a) Forward current exceeds certain value

(b) Reverse bias exceeds certain value

(c) Forward bias exceeds certain value

(d) Potential barrier is reduced to zero

Concept Questions :-

Applications of PN junction
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When forward bias is applied to a P-N junction, then what happens to the potential barrier VB, and the width of charge depleted region x

(a) VB increases, x decreases

(b) VB decreases, x increases

(c) VB increases, x increases

(d) VB decreases, x decreases

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Function of rectifier is 

(a) To convert ac into dc             (b) To convert dc into ac
(c) Both (a) and (b)                   (d) None of these

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When the P end of P-N junction is connected to the negative terminal of the battery and the N end to the positive terminal of the battery, then the P-N junction behaves like 

(a) A conductor                       (b) An insulator
(c) A super-conductor              (d) A semi-conductor

Concept Questions :-

Applications of PN junction
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A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 5.0×10-7m wide, the intensity of the electric field in this region is 
(a) 1.0×106 V/m                      (b) 1.0×105 V/m
(c) 2.0×105 V/m                      (d) 2.0×106 V/m

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