For transistor action

(1) Base, emitter and collector regions should have similar size and doping concentrations.

(2) The base regions must be very thin and lightly doped.

(3) The emitter-base junction is forward biased and the base-collector junction is reverse biased.

(4) Both the emitter-base junction as well as the base-collector junction are forward biased.

Which of the following pairs of statements is correct?

(a)   (4) and (1)                                       (b)   (1) and (2)

(c)   (2) and (3)                                       (d)    (3) and (4)

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A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength 

(a) 6000 A                                    (b) 4000 nm

(c) 6000 nm                                  (d) 4000 A

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Applications of PN junction
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The symbolic representation of four logic gates 

                                       

                           (i)                                                                              (ii)

 

                                

                           (iii)                                                                              (iv)

The logic symbols for OR, NOT and NAND gates are respectively

(a)    (iii), (iv), (ii)                                            (b)   (iv), (i), (iii)

(c)    (iv), (ii), (i)                                              (d)   (i), (iii), (iv) 

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A transistor is operated in common-emitter configuration at Vc=2volt such that a change in the base current from 100 μA to 200 μA produces a change in the collector current from 5 mA to 10 mA. The current gain is 

1. 75                                2. 100

3. 150                              4. 50

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Sodium has body centred packing.Distance between two nearest atom is 3.7A0. The lattice parameter is 

(a) 6.8 A0                                     (b) 4.3 A0

(c) 3.0 A0                                     (d) 8.6 A0

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Types of semiconductors
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If the lattice parameter for a crystalline structure is 3.6 A0, then the atomic radius in fcc crystal is

(a) 1.81 A0                                  (b) 2.10 A0

(c) 2.92  A0                                (d) 1.27  A0

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Types of semiconductors
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The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be

(a) 90                            (b) 10

(c) 1.25                         (d) 100

Concept Questions :-

Applications of Transistor
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A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

1. 10×1014 Hz                              2. 5×1014 Hz

3. 1×1014 Hz                                4. 20×1014 Hz

Concept Questions :-

Applications of PN junction
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The circuit is equivalent to

1. AND gate                              2. NAND gate

3. NOR gate                              4. OR gate 

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In the forward bias arrangement of a PN-junction diode

(a) The N-end is connected to the positive terminal of the battery

(b) The P-end is connected to the positive terminal of the battery

(c) The direction of current is from N-end to P-end in the diode

(d) The P-end is connected to the negative terminal of battery

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