The input resistance of a silicon transistor is

100 Ω. Base current is changed by 40 μA

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 kΩ.

The voltage gain of the amplifier is

1. 2000

2. 3000

3. 4000

4. 1000

Subtopic:  Transistor (OLD NCERT) |
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NEET - 2012
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Symbolic representation of four logic gates

are shown as

(i) 

(ii) 

(iii) 

(iv) 

Pick out which ones are for AND, NAND and 

NOT gates, respectively.

(a) (iii), (ii)and (i)

(b) (iii), (ii) and (iv)

(c) (ii), (iv) and (iii)

(d) (ii), (iii) and (iv)

Subtopic:  Logic gates |
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From NCERT
NEET - 2011
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If a small amount of antimony is added to germanium crystal

(1) the antimony becomes an acceptor atom

(2) there will be more free electrons than holes in the semiconductor

(3) its resistance is increased

(4) it becomes a p-type semiconductor

Subtopic:  Types of Semiconductors |
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In forward biasing of the p-n junction 

1. the positive terminal of the battery is connected to n-side and the depletion region becomes thin
2. the positive terminal of the battery is connected to n-side and the depletion region becomes thick
3. the positive terminal of the battery is connected to p-side and the depletion region becomes thin
4. the positive terminal of the battery is connected to p-side and the depletion region becomes thick
Subtopic:  PN junction |
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NEET - 2011
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In the following figure, the diodes which are forward biased, are

                                                                    

                                                                  

1.  III and IV only

2.  I and III only

3.  II only

4.  II and IV only

Subtopic:  PN junction |
 83%
From NCERT
NEET - 2011
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Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentration of 1.5×1016 m-3. Doping by indium increases nh to 4.5×1022 m-3. The doped semiconductor is of:

1. n-type with electron concentration \(n_{e}=5\times10^{22}~m^{-3}\)
2. p-type with electron concentration \(n_{e}=2.5\times10^{23}~m^{-3}\)
3. n-type with electron concentration \(n_{e}=2.5\times10^{10}~m^{-3}\)
4. p-type with electron concentration \(n_{e}=5\times10^{9}~m^{-3}\)
Subtopic:  Types of Semiconductors |
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A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit, as shown in the figure. The current through the diode is:

                      

1. 10 mA

2. 15 mA

3. 20 mA

4. 5 mA

Subtopic:  Applications of PN junction |
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NEET - 2011
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Which one of the following statement is false?

(1) Pure Si doped with trivalent impurities gives a p-type semiconductor 

(2) Majority carries in a n-type semiconductor are holes

(3) Minority carries in a p-type semiconductor are electrons

(4) The resistance of intrinsic semiconductor decreases with increase of temperature 

Subtopic:  Types of Semiconductors |
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The device that can act as a complete electronic circuit is

1. Junction diode

2. Integrated circuit

3. Junction transistor

4. Zener diode

Subtopic:  Transistor (OLD NCERT) | Applications of Transistor (OLD NCERT) |
From NCERT
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The following figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are as given

                            

The logic gate is 

(1) NOR gate                                                 

(2) OR gate

(3) AND  gate                                                 

(4) NAND gate

Subtopic:  Logic gates |
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