C and Si both have same lattice structure,having 4 bonding electrons in each.However, C is insulator whereas Si is intrinsic semiconductor. This is because

(a)in case of C, the valence band is not completely filled at absolute zero temperature

(b)in case of C,the condition band is partly filled even at absolute zero temperature

(c)the four bonding electrons in the case of C lie in the second orbit,Whereas in the case of Si they lie in the third

(d)the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit

The four bonding electrons in the case of C lie in the second orbit, whereas in case of Si they lies in the third orbit so loosely bounded valency electron in Si as compared to C.

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