Two parallel metal plates having charges \(+Q\) and \(-Q,\) face each other at a certain distance between them. If the plates are now dipped in the kerosene oil tank, the electric field between the plates will:
1. increase
2. decrease
3. remain the same
4. become zero
Subtopic:  Dielectrics in Capacitors |
 78%
Level 2: 60%+
AIPMT - 2010
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The electric field at a distance \(\frac{3R}{2}\) from the centre of a charged conducting spherical shell of radius \(R\) is \(E\). The electric field at a distance \(\frac{R}{2}\) from the centre of the sphere is:
1. \(E\)
2. \(\frac{E}{2}\)
3. \(\frac{E}{3}\)
4. zero
 

Subtopic:  Gauss's Law |
 86%
Level 1: 80%+
AIPMT - 2010
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The thermo e.m.f E in volts of a certain thermocouple is found to vary with temperature difference θ in ºC between the two junctions according to the relation
E=30 θ-θ215 The neutral temperature for the thermo-couple will be:

1. 400ºC

2. 225ºC

3. 30ºC

4. 450ºC

Subtopic:  Heating Effects of Current |
 64%
Level 2: 60%+
AIPMT - 2010
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A particle having a mass of \(10^{-2}\) kg carries a charge of \(5\times 10^{-8}~\mathrm{C}\). The particle is given an initial horizontal velocity of \(10^5~\mathrm{ms^{-1}}\) in the presence of electric field \(\vec{E}\) and magnetic field \(\vec{B}\) . To keep the particle moving in a horizontal direction, it is necessary that:
 

(a) \(\vec{B}\) should be perpendicular to the direction of velocity and \(\vec{E}\)
should be along the direction of velocity.
(b) Both \(\vec{B}\) and \(\vec{E}\) should be along the direction of velocity.
(c) Both \(\vec{B}\) and \(\vec{E}\) are mutually perpendicular and perpendicular to the direction of velocity
(d) \(\vec{B}\) should be along the direction of velocity and \(\vec{E}\) should be perpendicular to the direction of velocity.
 

Which one of the following pairs of statements is possible?

1. (c) and (d)
2. (b) and (c)
3. (b) and (d)
4. (a) and (c)
Subtopic:  Lorentz Force |
 64%
Level 2: 60%+
AIPMT - 2010
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When monochromatic radiation of intensity I falls on a metal surface, the number of photoelectrons and their maximum kinetic energy are N and T respectively. If the intensity of radiation is 2I, the number of emitted electrons and their maximum kinetic energy are respectively:

1. 2N and T

2. 2N and 2T

3. N and T

4. N and 2T

Subtopic:  Electron Emission |
 85%
Level 1: 80%+
AIPMT - 2010
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The electrons in the hydrogen atom jump from the excited state (n = 3) to its ground state (n = 1) and the photons thus emitted irradiate a photosensitive material. If the work function of the material is 5.1 eV, the stopping potential is estimated to be (the energy of the electron in nth state En=-13.6n2eV):
1. 12.1 V

2. 17.2 V

3. 7 V

4. 5.1 V

Subtopic:  Bohr's Model of Atom |
 70%
Level 2: 60%+
AIPMT - 2010
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The binding energy per nucleon in deuterium and helium nuclei are \(1.1\) MeV and \(7.0\) MeV, respectively. When two deuterium nuclei fuse to form a helium nucleus the energy released in the fusion is:
1. \(2.2\) MeV
2. \(28.0\) MeV
3. \(30.2\) MeV
4. \(23.6\) MeV

Subtopic:  Nuclear Binding Energy |
 83%
Level 1: 80%+
AIPMT - 2010
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The decay constant of a radioisotope is λ. If A1 and A2 are its activities at times t1 and t2 respectively, the number of nuclei which have decayed during the time (t1 – t2):

1. A1 – A2

2. (A1 – A2) / λ

3. λ (A1 – A2)

4. A1t1 – A2t2

 76%
Level 2: 60%+
AIPMT - 2010
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For transistor action:
 

(a) Base, emitter, and collector regions should have similar sizes and doping concentrations
(b) The base region must be very thin and lightly doped.
(c) The emitter-base junction is forward-biased and the base-collector junction is reverse-biased.
(d) Both the emitter-base junctions as well as the base-collector junction are forward-biased

Which one of the following pairs of statements is correct?

1. (a), (b)

2. (b), (c)

3. (c), (d)

4. (d), (a)

 89%
Level 1: 80%+
AIPMT - 2010
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The following figure shows a logic gate circuit with two inputs \(A\) and \(B\), and the output \(Y\). The voltage waveforms of \(A,B\) and \(Y\) are as given.
 

The logic gate is:

1. OR gate 2. AND gate
3. NAND gate 4. NOR gate
Subtopic:  Logic gates |
 81%
Level 1: 80%+
AIPMT - 2010
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