Q. No.The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:
1.
Sample \(X\) is undoped while samples \(Y\) and \(Z\) have been doped with a third group and a fifth group impurity respectively.
2.
Sample \(X\) is undoped while both samples \(Y\) and \(Z\) have been doped with a fifth group impurity.
3.
Sample \(X\) has been doped with equal amounts of third and fifth group impurities while samples \(Y\) and \(Z\) are undoped.
4.
Sample \(X\) is undoped while samples \(Y\) and \(Z\) have been doped with a fifth group and a third group impurity respectively.
For a diode connected in parallel with a resistor, Choose the correct graph between \((I)\) and \((V)\) for the given circuit:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
| 1. | \(1.0 \times 10^6 ~\text{V/m}\) | 2. | \(1.0 \times 10^5 ~\text{V/m}\) |
| 3. | \(2.0 \times 10^5 ~\text{V/m}\) | 4. | \(2.0 \times 10^6 ~\text{V/m}\) |
If the reverse bias in a junction diode is changed from \(5~\text V\) to \(15~\text V\) then the value of current changes from \(38~\mu \text{A}\) to \(88~\mu \text{A}.\) The resistance of the junction diode will be:
1. \(4\times10^{5}\)
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)
| 1. | \(5~\text A\) | 2. | \(0.2~\text A\) |
| 3. | \(0.6~\text A\) | 4. | zero |
| 1. | the potential is the same everywhere. |
| 2. | the \(\mathrm{p}\text-\)type is at higher potential than the \(\mathrm{n}\text-\)type side. |
| 3. | there is an electric field at the junction directed from the \(\mathrm{n}\text-\)type side to the \(\mathrm{p}\text-\)type side. |
| 4. | there is an electric field at the junction directed from the \(\mathrm{p}\text-\)type side to the \(\mathrm{n}\text-\)type side. |
| 1. | \(V_B\) increases, \(x\) decreases | 2. | \(V_B\) decreases, \(x\) increases |
| 3. | \(V_B\) increases, \(x\) increases | 4. | \(V_B\) decreases, \(x\) decreases |
Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?
| 1. |  |
2. |  |
| 3. |  |
4. |  |
2. \(5\) V
3. \(10\) V
4. \(\frac{5}{\sqrt{2}}~\text{V}\)
In the circuit given below, if \(V(t)\) is the sinusoidal voltage source, then the voltage drop \(V_{AB}(t)\) across the resistance \(R\):
| 1. | is half-wave rectified. |
| 2. | is full-wave rectified. |
| 3. | has the same peak value in the positive and negative half-cycles. |
| 4. | has different peak values during the positive and negative half-cycles. |
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