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Q. No.Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
1.
2.
3.
4.
Subtopic: Â PN junction |
 85%
From NCERT
AIPMT - 2004
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The truth table for the following network is:
| 1. |
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| 2. |
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| 3. |
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| 4. | None of the above |
Subtopic: Â Logic gates |
 78%
From NCERT
AIPMT - 1999
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In semiconductors at room temperature:
| 1. | The valence band is completely filled and the conduction band is partially filled. |
| 2. | The valence band is completely filled. |
| 3. | The conduction band is completely empty. |
| 4. | The valence band is partially empty and the conduction band is partially filled. |
Subtopic: Â Energy Band theory |
 72%
From NCERT
AIPMT - 2004
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The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without a filter is \(10~\text V.\) The DC component of the output voltage is:
1. \(\dfrac{10}{\pi }~\text V\)
2. \(10~\text V\)
3. \(\dfrac{20}{\pi }~\text V\)
4. \(\dfrac{10}{\sqrt{2}}~\text V\)
Subtopic: Â Rectifier |
 53%
From NCERT
AIPMT - 2004
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For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?
| 1. | In F.B. the voltage across \(R\) is \(V.\) |
| 2. | In R.B. the voltage across \(R\) is \(V.\) |
| 3. | In F.B. the voltage across \(R\) is \(2V.\) |
| 4. | In R.B. the voltage across \(R\) is \(2V.\) |
Subtopic: Â PN junction |
 81%
From NCERT
AIPMT - 2002
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Reverse bias applied to a junction diode:
| 1. | lowers the potential barrier |
| 2. | raises the potential barrier |
| 3. | increases the majority carrier current |
| 4. | increases the minority carrier's current |
Subtopic: Â PN junction |
 75%
From NCERT
AIPMT - 2003
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The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
| 1. | diode design | 2. | temperature |
| 3. | forward bias | 4. | doping density |
Subtopic: Â PN junction |
 75%
From NCERT
AIPMT - 2003
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Following diagram performs the logic function of:
1. AND gate
2. NAND gate
3. OR gate
4. XOR gate
Subtopic: Â Logic gates |
 79%
From NCERT
AIPMT - 2003
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Application of a forward bias to a \(\mathrm{p\text-n}\) junction:
| 1. | widens the depletion zone. |
| 2. | increases the number of donors on the n side. |
| 3. | increases the potential difference across the depletion zone. |
| 4. | increases the electric field in the depletion zone. |
Subtopic: Â PN junction |
 57%
From NCERT
AIPMT - 2005
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Identify the incorrect statement from the following:
| 1. | The resistivity of a semiconductor increases with an increase in temperature. |
| 2. | Substances with an energy gap of the order of \(10~\text{eV}\) are insulators. |
| 3. | In conductors, the valence and conduction bands may overlap. |
| 4. | The conductivity of a semiconductor increases with an increase in temperature. |
Subtopic: Â Energy Band theory |
 80%
From NCERT
AIPMT - 2005
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