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In a common-emitter transistor circuit, the base current is $40<mspace\; width="1em"></mspace>\mu A$, then V_BE is 

1. 2 V
2. 0.2 V
3. 0.8 V
4. zero

Four equal resistors, each of resistance 10 $\mathrm{\Omega }$, are connected as shown in the circuit diagram. The equivalent resistance between A and B is

1. 5 $\mathrm{\Omega }$
2. 10 $\mathrm{\Omega }$
3. 20 $\mathrm{\Omega }$
4. 40 $\mathrm{\Omega }$

Calculate the current I in the following circuit, if all the diodes are ideal. All resistances are of 200 $\mathrm{\Omega }$.

1. zero
2. 1 A
3. 2 A
4. 4 A

The circuit shown in the figure contains two diodes each with a forward resistance of 50$\mathrm{\Omega }$ and with infinite backward resistance. If the battery of 6 V is connected in the circuit, then the current through the 100$\mathrm{\Omega }$ resistance is

1. zero
2. 0.02 A
3. 0.03 A
4. 0.036 A

All the diodes are ideal. The current flowing in 2$\mathrm{\Omega }$ resistor connected between the diodes D₁ and D₂ is

1. 1 A
2. 2 A
3. 3 A
4. zero

The circuit diagram below shows an AC input source connected to a transformer and a bridge rectifier circuit with a load resistance \(R.\) What type of output signal appears across the load resistance \(R\text{?}\)

In the circuit shown, the average power dissipated in the resistor is (assume diode to be ideal)

1. $\frac{{\mathrm{E}}_0^2}{2\mathrm{R}}$
2. $\frac{{\mathrm{E}}_0^2}{4\mathrm{R}}$
3. $\frac{{\mathrm{E}}_0^2}{\mathrm{R}}$
4. zero

In an n-p-n transistor working in active mode, the depletion region
1. Is not formed
2. At the emitter-base junction is wider than that at collector-base junction
3. At the emitter-base junction is thinner than that at collector-base junction
4. At the two junctions have equal width

A transistor has a current amplification factor of 60. In a CE amplifier, the input resistance is 1 k$\mathrm{\Omega }$ and the output voltage is 0.01 V. The transconductance is (in SI units)
1. ${10}^{-5}$
2. $6\times {10}^{-2}$
3. $6\times {10}^4$
4. 10

A common emitter amplifier is designed with NPN transistor ($\mathrm{\alpha }$ = 0.99). The input impedance is 1 k$\mathrm{\Omega }$ and load is 10 k$\mathrm{\Omega }$. The voltage gain will be
1. 9.9
2. 99
3. 990
4. 9900

In the following transistor amplifier circuit, $\mathrm{\beta }$ = 50. V_CE of the transistor is-

1. 4 V
2. 6 V
3. 10 V
4. 8 V

Logic gate realized from a p-n junction shown in the figure is

1. OR gate
2. AND gate
3. NOT gate
4. NOR gate

A potential barrier of 0.4 V exists across a $p-n$ junction. A constant electric field of magnitude ${10}^6$ V/m exists in the depletion region. The width of depletion region is
$1.<mspace\; width="1em"></mspace>4\times {10}^{-7}<mspace\; width="1em"></mspace>m<mspace\; width="1em"></mspace>$
$2.<mspace\; width="1em"></mspace>0.1<mspace\; width="1em"></mspace>mm<mspace\; width="1em"></mspace>$
$3.<mspace\; width="1em"></mspace>5\times {10}^{-7}m<mspace\; width="1em"></mspace>$
$4.<mspace\; width="1em"></mspace>6\times {10}^{-5}<mspace\; width="1em"></mspace>m$

Which one is universal gate ?
1. AND gate
2. NOT gate
3. OR gate
4. NAND gate