For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?
1. | In F.B. the voltage across \(R\) is \(V.\) |
2. | In R.B. the voltage across \(R\) is \(V.\) |
3. | In F.B. the voltage across \(R\) is \(2V.\) |
4. | In R.B. the voltage across \(R\) is \(2V.\) |
Reverse bias applied to a junction diode:
1. | lowers the potential barrier |
2. | raises the potential barrier |
3. | increases the majority carrier current |
4. | increases the minority carrier's current |
The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
1. | diode design | 2. | temperature |
3. | forward bias | 4. | doping density |
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
1. | ![]() |
2. | ![]() |
3. | ![]() |
4. | ![]() |
1. | The resistivity of a semiconductor increases with an increase in temperature. |
2. | Substances with an energy gap of the order of \(10~\text{eV}\) are insulators. |
3. | In conductors, the valence and conduction bands may overlap. |
4. | The conductivity of a semiconductor increases with an increase in temperature. |
In a half-wave rectification, what is the output frequency if the input frequency is \(50~\text{Hz}?\)
1. \(50~\text{Hz}\)
2. \(100~\text{Hz}\)
3. \(25~\text{Hz}\)
4. \(60~\text{Hz}\)
In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
1. | \(\mathrm{p}\text-\)type semiconductor |
2. | insulator |
3. | metal |
4. | \(\mathrm{n}\text-\)type semiconductor |
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
1. | \(2.5~\text A\) | 2. | \(10.0~\text A\) |
3. | \(1.43~\text A\) | 4. | \(3.13~\text A\) |
1. | the drift of holes. |
2. | diffusion of charge carriers. |
3. | migration of impurity ions. |
4. | drift of electrons. |
The LED:
1. | is reverse-biased. |
2. | is forward-biased. |
3. | can be made of \(\mathrm{GaAs}.\) |
4. | both (2) and (3) are correct. |