If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\)
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be:
1. | 2.5 A | 2. | 10.0 A |
3. | 1.43 A | 4. | 3.13 A |
A 2 V battery is connected across the points A and B as shown in the figure given below. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery when its positive terminal is connected to A is:
1. | 0.2 A | 2. | 0.4 A |
3. | Zero | 4. | 0.1 A |
What is the reading of the ideal ammeters A1 and A2 connected in the given circuit diagram, if junction diodes are ideal?
1. 2 A and zero
2. 3 A and 2 A
3. 2 A and 3 A
4. Zero and 2 A
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
1. | 2. | ||
3. | 4. |
When a p-n junction is forward biased, then:
1. | the depletion region becomes thick. |
2. | the p-side is at a higher potential than n side. |
3. | the current flowing is zero. |
4. | the effective resistance is of the order of \(10^6 ~\Omega\). |
A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is m wide, the intensity of the electric field in this region is:
1. | \(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) | 2. | \(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) |
3. | \(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) | 4. | \(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) |
If in a reverse-biased junction, an increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light of wavelength less than or equal to 620 nm, then the bandgap is:
1. 1 eV
2. 2 eV
3. 20 eV
4. 0.2 eV
What is the equivalent resistance across the terminals of the battery if the diodes are ideal?
1. | \(10~ \Omega\) | 2. | \(20~ \Omega\) |
3. | \(15~ \Omega\) | 4. | \({10\over3} ~ \Omega\) |
For the given circuit of the P-N junction diode, which of the following statements is correct?
1. | In F.B. the voltage across R is V. |
2. | In R.B. the voltage across R is V. |
3. | In F.B. the voltage across R is 2V. |
4. | In R.B. the voltage across R is 2V. |