A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength:

1. 6000 Å

2. 4000 nm

3. 6000 nm

4. 4000 Å

 

The circuit is equivalent to: 
 

1. AND gate

2. NAND gate

3. NOR gate

4. OR gate

In the following circuit, the output Y for all possible inputs A and B is expressed by the truth table: 
    
 

The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
   

1. \(\mathrm{OR}\) gate
2. \(\mathrm{NOR}\) gate
3. \(\mathrm{AND}\) gate
4. \(\mathrm{NAND}\) gate

\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:

Zener breakdown will occur if:
1. impurity level is low.
2. impurity level is high.
3. impurity is less on the n-side.
4. impurity is less on the p-side.

The logic behind the 'NOR' gate is that it gives:

A 2 V battery is connected across the points A and B as shown in the figure given below. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery when its positive terminal is connected to A is:

In the circuit given below, if V(t) is the sinusoidal voltage source, then the voltage drop V_AB(t) across the resistance R:

In the circuit shown in the figure, the maximum output voltage V_o is:

1. 0 V

2. 5 V

3. 10 V

4. $\frac{5}{\sqrt{2}} V$