Identify the incorrect statement from the following:

1. The resistivity of a semiconductor increases with an increase in temperature.
2. Substances with an energy gap of the order of 10 eV are insulators.
3. In conductors, the valence and conduction bands may overlap.
4. The conductivity of a semiconductor increases with an increase in temperature.

Subtopic:  Energy Band theory |
 78%
From NCERT
AIPMT - 2005
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Application of a forward bias to a p-n junction:

1. widens the depletion zone.
2. increases the number of donors on the n side.
3. increases the potential difference across the depletion zone.
4. increases the electric field in the depletion zone.
Subtopic:  PN junction |
 56%
From NCERT
AIPMT - 2005
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Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
 

1. 2.
3. 4.

Subtopic:  PN junction |
 83%
From NCERT
AIPMT - 2004
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The truth table for the following network is:

1.
A B Y
0 0 0
0 1 0
1 0 0
1 1 1
2.
A B Y
0 0 0
0 1 1
1 0 1
1 1 0
3.
A B Y
0 0 1
0 1 0
1 0 0
1 1 1
4. None of the above
Subtopic:  Logic gates |
 76%
From NCERT
AIPMT - 1999
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In semiconductors at room temperature:

1. The valence band is completely filled and the conduction band is partially filled.
2. The valence band is completely filled.
3. The conduction band is completely empty.
4. The valence band is partially empty and the conduction band is partially filled.
Subtopic:  Energy Band theory |
 70%
From NCERT
AIPMT - 2004
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In a p–n junction photocell, the value of the photo electromotive force produced by monochromatic light is proportional to:

1. the intensity of the light falling on the cell.
2. the frequency of the light falling on the cell.
3. the voltage applied at the p–n junction.
4. the barrier voltage at the p–n junction.

Subtopic:  PN junction |
 60%
From NCERT
AIPMT - 2004
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For the given circuit of the P-N junction diode, which of the following statements is correct?

        

1. In F.B. the voltage across R is V.
2. In R.B. the voltage across R is V.
3. In F.B. the voltage across R is 2V.
4. In R.B. the voltage across R is 2V.

Subtopic:  PN junction |
 79%
From NCERT
AIPMT - 2002
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Reverse-bias applied to a junction diode:

1. lowers the potential barrier
2. raises the potential barrier
3. increases the majority carrier current
4. increases the minority carrier's current

Subtopic:  PN junction |
 74%
From NCERT
AIPMT - 2003
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The barrier potential of a p-n junction diode does not depend on:

1. diode design

2. temperature

3. forward bias

4. doping density

Subtopic:  PN junction |
 73%
From NCERT
AIPMT - 2003
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Following diagram performs the logic function of:

1. AND gate

2. NAND gate

3. OR gate

4. XOR gate

Subtopic:  Logic gates |
 77%
From NCERT
AIPMT - 2003
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