Why can't we take one slab of p-type semiconductor and physically join it to another slab of n-type semiconductor to get a p-n junction?

1. the diffusion of majority charge carriers will not occur.
2. the junction will behave as a discontinuity for the flowing charge carriers.
3. the junction will behave as a continuity for the flowing charge carriers.
4. both (1) and (2).

Subtopic:  PN junction |
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The V-I characteristic of a silicon diode is shown in the figure. The resistance of the diode at ID=15 mA is: 

 

1. 20 Ω
2. 30 Ω
3. 15 Ω
4. 10 Ω

Subtopic:  PN junction |
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The \((V\text-I)\) characteristic of a silicon diode is shown in the figure. The resistance of the diode at \(V_D=-10\) V is:

     
1. \(1\times10^7~\Omega~\)
2. \(2\times10^7~\Omega~\)
3. \(3\times10^7~\Omega~\)
4. \(4\times10^7~\Omega~\)

Subtopic:  PN junction |
 80%
From NCERT
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To view explanation, please take trial in the course.
NEET 2023 - Target Batch - Aryan Raj Singh