When a forward bias is applied to a p-n junction, it

1. raises the potential barrier.
2. reduces the majority carrier current to zero.
3. lowers the potential barrier.
4. None of the above.

A p-n photodiode is fabricated from a semiconductor with a bandgap of \(2.8\) eV. The energy of the incident photon with a wavelength of \(6000\) nm is:
1. \(0.207\) eV
2. \(0.270\) eV
3. \(0.027\) eV
4. \(0.072\) eV

The number of silicon atoms per m³ is 5 × 10²⁸. This is doped simultaneously with 5 × 10²² atoms per m³ of Arsenic and 5 × 10²⁰ per m³ atoms of Indium. The number of holes is: (Given that $n_i=1.5\times {10}^{16} m^{-3}$)

1. \(4.51\times 10^{9}\)
2. \(4.99\times 10^{22}\)
3. \(1.56\times 10^{22}\)
4. \(3.33\times 10^{23}\)