| 1. | \(\begin{array}{c|c|c} {n} &{~m} & {z} \\ \hline 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 1 & 0 \\ 1 & 0 & 0 \end{array}\) | 2. | \(\begin{array}{c|c|c} {n} & {~m} & {z} \\ \hline 0 & 0 & 0 \\ 0 & 1 & 1 \\ 1 & 1 & 0 \\ 1 & 0 & 1 \end{array}\) |
| 3. | \(\begin{array}{c|c|c} {n} & {~m} & {z} \\ \hline 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 1 & 1 \\ 1 & 0 & 0 \end{array}\) | 4. | \(\begin{array}{c|c|c} {n} &{~m} & {z} \\ \hline 0 & 0 & 1 \\ 0 & 1 & 1 \\ 1 & 1 & 0 \\ 1 & 0 & 0 \end{array}\) |

| Assertion (A): | A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically. |
| Reason (R): | Below the critical voltage limit, only majority charge carries flow which increases drastically above critical voltage. |
| 1. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
| 2. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
| 3. | (A) is True but (R) is False. |
| 4. | (A) is False but (R) is True. |

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| 1. | Widths of depletion region on either side of the interface are equal |
| 2. | The depletion region widths is more on \(\mathrm{p\text-}\)side compared to that in \(\mathrm{n\text-}\)side |
| 3. | The depletion region widths is more on \(\mathrm{n\text-}\)side compared to that in \(\mathrm{p\text-}\)side |
| 4. | No depletion region forms because of unequal doping concentrations on \(\mathrm{p}\) and \(\mathrm{n\text-}\)sides |