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Q. No.
Statement-I:
By doping silicon semiconductors with pentavalent material, the electron density increases.
Statement-II:
The n-type semiconductors have a net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below :
1.
Both Statement I and Statement II are true.
2.
Statement I is true but Statement II is false.
3.
Statement I is false but Statement II is true.
4.
Both Statement I and Statement II are false.
Subtopic: Β Types of Semiconductors |
Β 70%
Level 2: 60%+
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In the given circuit with a Zener diode acting as a voltage regulator, what is the power dissipated across the Zener diode?
| 1. | \(180~\text{mW}\) | 2. | \(120~\text{mW}\) |
| 3. | \(140~\text{mW}\) | 4. | \(160~\text{mW}\) |
Subtopic: Β Applications of PN junction |
Β 74%
Level 2: 60%+
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Subtopic: Β Logic gates |
Β 80%
Level 1: 80%+
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Four NOR gates are connected as shown in the figure. The truth table for the given figure is:
| 1. | \(A\) | \(B\) | \(Y\) | 2. | \(A\) | \(B\) | \(Y\) |
| \(0\) | \(0\) | \(1\) | \(0\) | \(0\) | \(1\) | ||
| \(0\) | \(1\) | \(0\) | \(0\) | \(1\) | \(0\) | ||
| \(1\) | \(0\) | \(0\) | \(1\) | \(0\) | \(1\) | ||
| \(1\) | \(1\) | \(1\) | \(1\) | \(1\) | \(0\) | ||
| 3. | \(A\) | \(B\) | \(Y\) | 4. | \(A\) | \(B\) | \(Y\) |
| \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | ||
| \(0\) | \(1\) | \(1\) | \(0\) | \(1\) | \(1\) | ||
| \(1\) | \(0\) | \(0\) | \(1\) | \(0\) | \(1\) | ||
| \(1\) | \(1\) | \(1\) | \(1\) | \(1\) | \(0\) | ||
Subtopic: Β Logic gates |
Β 62%
Level 2: 60%+
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An intrinsic semiconductor has a charge carrier density of \(1.5\times10^{16}~\text{m}^{-3}\) at \(27^\circ\text{C}.\) After doping with an impurity, the hole density rises to \(4.5\times10^{22}~\text{m}^{-3}.\) What is the electron density in the doped semiconductor?
1. \(5Γ10^9~\text{m}^{β3}\)
2. \(7\times10^9~\text{m}^{β3}\)
3. \(13Γ10^9~\text{m}^{β3}\)
4. \(2Γ10^9~\text{m}^{β3}\)
1. \(5Γ10^9~\text{m}^{β3}\)
2. \(7\times10^9~\text{m}^{β3}\)
3. \(13Γ10^9~\text{m}^{β3}\)
4. \(2Γ10^9~\text{m}^{β3}\)
Subtopic: Β Types of Semiconductors |
Β 81%
Level 1: 80%+
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Identify the logic operation carried out.
1. \(\mathrm{OR}\)
2. \(\mathrm{NOR}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NAND}\)
1. \(\mathrm{OR}\)
2. \(\mathrm{NOR}\)
3. \(\mathrm{AND}\)
4. \(\mathrm{NAND}\)
Subtopic: Β Logic gates |
Β 83%
Level 1: 80%+
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Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward-biased, built in potential in each diode is \(0.7 ~\text V.\) For the input voltages shown in the figure, the voltage (in Volts) at point \(A\) is:
1. \(22~\text V\)
2. \(12~\text V\)
3. \(18~\text V\)
4. \(15~\text V\)
1. \(22~\text V\)
2. \(12~\text V\)
3. \(18~\text V\)
4. \(15~\text V\)
Subtopic: Β Applications of PN junction |
Β 84%
Level 1: 80%+
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In the digital logic circuit shown, what will be the value of the output \(Y\text{?}\)
1. zero
2. one
3. toggles between zero and one
4. will not execute
Subtopic: Β Logic gates |
Β 72%
Level 2: 60%+
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A Zener diode with a breakdown voltage of \(8~\text{V}\) and a maximum power dissipation of \(0.5~\text W\) is connected across a potential divider, as shown in the figure, such that the Zener diode experiences the maximum possible voltage. What should be the value of the protective resistance \(R_p\text{?}\)
| 1. | \(172~\Omega\) | 2. | \(192~\Omega\) |
| 3. | \(222~\Omega\) | 4. | \(342~\Omega\) |
Subtopic: Β Applications of PN junction |
Β 69%
Level 2: 60%+
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For the forward-biased diode characteristics shown in the figure, the dynamic resistance at \(I_D=3 ~\text{mA}\) is:
| 1. | \(15~\Omega\) | 2. | \(25~\Omega\) |
| 3. | \(45~\Omega\) | 4. | \(55~\Omega\) |
Subtopic: Β PN junction |
Β 70%
Level 2: 60%+
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