The truth table for the circuit given in the fig. is:
| 1. | \(A\) | \(B\) | \(Y\) | 2. | \(A\) | \(B\) | \(Y\) |
| 0 | 0 | 1 | 0 | 0 | 1 | ||
| 0 | 1 | 1 | 0 | 1 | 1 | ||
| 1 | 0 | 1 | 1 | 0 | 0 | ||
| 1 | 1 | 1 | 1 | 1 | 0 | ||
| 3. | \(A\) | \(B\) | \(Y\) | 4. | \(A\) | \(B\) | \(Y\) |
| 0 | 0 | 0 | 0 | 0 | 1 | ||
| 0 | 1 | 0 | 0 | 1 | 0 | ||
| 1 | 0 | 1 | 1 | 0 | 0 | ||
| 1 | 1 | 1 | 1 | 1 | 0 | ||
The logic gate equivalent to the given logic circuit is:
1. AND
2. OR
3. NOR
4. NAND
In the digital logic circuit shown, what is the sequence of output values at terminal \(Z\) corresponding to the input combinations \((A,B)=(1,0),(0,0),(1,1)\) and \((0,1)\text{?}\)
| 1. | \(1,0,1,1\) |
| 2. | \(0,1,0,0\) |
| 3. | \(0,0,1,0\) |
| 4. | \(1,1,0,1\) |
A diode with a forward bias voltage drop of \(0.5~\text{V}\) has a maximum safe current rating of \(10~\text{mA}.\) Suppose this diode is connected in series with a resistor to a battery of EMF \(1.5~\text{V}.\)What minimum resistance value is required to ensure the current does not exceed the diode's safe operating limit?
1. \(300~\Omega \)
2. \(50~\Omega \)
3. \(100~\Omega \)
4. \(200~\Omega\)
If a semiconductor photodiode can detect a photon with a maximum wavelength of \(400~\text{nm},\) then the energy of its band gap is:
(take Planck’s constant \(h=6.63 \times 10^{-34} \text { J-s }\) and speed of light \(c=3 \times 10^8\) m/s)
1. \(3.1~\text{eV}\)
2. \(1.1~\text{eV}\)
3. \(2.0~\text{eV}\)
4. \(1.5~\text{eV}\)
With increasing biasing voltage of a photodiode, the photocurrent magnitude:
| 1. | increases initially and saturates finally. |
| 2. | increases initially and after attaining certain value, it decreases. |
| 3. | increases linearly. |
| 4. | remains constant. |
Two Zener diodes (\(A\) and \(B\)) having breakdown voltages of \(6~\text{V}\) and \(4~\text{V}\) respectively, are connected as shown in the circuit below. The output voltage \(V_0\) variation with input voltage linearly increasing with time, is given by: (\(V_{\text{input}}=0~\text{volt}\) at \(t=0~\text{second}\) and figures are qualitative)
| 1. | |
| 2. | |
| 3. | |
| 4. | |
For extrinsic semiconductors, when doping level is increased:
| 1. | Fermi-level of \(p\)-type semiconductors will go upward and Fermi-level of \(n\)-type semiconductors will go downward. |
| 2. | Fermi-level of \(p\)-type semiconductors will go downward and Fermi-level of \(n\)-type semiconductors will go upward. |
| 3. | Fermi-level of both \(p\)-type and \(n\)-type semiconductors will go upward for \(T>T_F\) K and downward for \(T<T_F\) K, where \(T_F\) is Fermi temperature. |
| 4. | Fermi-level of \(p\) and \(n\)-type semiconductors will not be affected. |
The truth table for the following logic circuit is :
| 1. | A | B | Y | 2. | A | B | Y | |
| 0 | 0 | 0 | 0 | 0 | 1 | |||
| 0 | 1 | 1 | 0 | 1 | 0 | |||
| 1 | 0 | 1 | 1 | 0 | 0 | |||
| 1 | 1 | 0 | 1 | 1 | 1 | |||
| 3. | A | B | Y | 4. | A | B | Y | |
| 0 | 0 | 1 | 0 | 0 | 0 | |||
| 0 | 1 | 0 | 0 | 1 | 1 | |||
| 1 | 0 | 1 | 1 | 0 | 0 | |||
| 1 | 1 | 0 | 1 | 1 | 1 | |||