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Q. No.In the DC voltage regulator circuit shown, where the Zener current is \(nI_L\) and the load current is \(I_L,\) what is the value of the series resistor \(R_{s}\text{?}\)
1.
\({\dfrac{\left(V_i-V_L\right)}{(n+1) I_L}}\)
2.
\({\dfrac{\left(V_i+V_L\right)}{(n+1) I_L}}\)
3.
\({\dfrac{\left(V_i-V_L\right)}{n I_L}}\)
4.
\({\dfrac{\left(V_i+V_L\right)}{n I_L}}\)
Subtopic: Applications of PN junction |
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Level 2: 60%+
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In an unbiased p-n junction electrons diffuse from the n-region to the p-region because:
| 1. | electrons travel across the junction due to potential difference |
| 2. | electron concentration in the n-region is more as compared to that in the p-region |
| 3. | only electrons move from the n to p region and not the vice-versa. |
| 4. | holes in the p-region attract them |
Subtopic: PN junction |
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Level 1: 80%+
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An unknown transistor needs to be identified as \(\mathrm{npn}\) or \(\mathrm{pnp}\) type. A multimeter, with \(\mathrm{+ve}\) and \(\mathrm{-ve}\) terminals, is used to measure resistance between different terminals transistor. If terminal \(2\) is the base of the transistor then which of the following is correct for a \(\mathrm{pnp}\) transistor ?
| 1. | \(\mathrm{+ve}\) terminal \(3,\) \(\mathrm{-ve}\) terminal \(2,\) resistance high |
| 2. | \(\mathrm{+ve}\) terminal \(2,\) \(\mathrm{-ve}\) terminal \(3,\) resistance high |
| 3. | \(\mathrm{+ve}\) terminal \(1,\) \(\mathrm{-ve}\) terminal \(2,\) resistance high |
| 4. | \(\mathrm{+ve}\) terminal \(2,\) \(\mathrm{-ve}\) terminal \(1,\) resistance high |
Subtopic: PN junction |
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The \(V\text-I\) characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is:
1. \(10\)
2. \(10^{-6}\)
3. \(100\)
4. \(10^6\)
1. \(10\)
2. \(10^{-6}\)
3. \(100\)
4. \(10^6\)
Subtopic: PN junction |
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What is the conductivity of a semiconductor sample having electron concentration of \(5\times10^{18}~\text{m}^{-3},\) hole concentration of \(5\times10^{19}~\text{m}^{-3},\) electron mobility of \(2.0~\text{m}^2~\text{V}^{-1}\text{s}^{-1}\) and hole mobility of \(0.01~\text{m}^2\text{V}^{-1}~\text{s}^{-1}?\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
Subtopic: Types of Semiconductors |
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An experiment is performed to determine the \(\text{I-V}\) characteristics of the Zener diode, which has a protective resistance of \({R=100~\Omega},\) and a maximum power of dissipation rating of \({1}~\text{W}.\) The minimum voltage range of the \(\text{DC}\) source in the circuit is:
1. \(({0-12})~\text{V}\)
2. \(({0-5})~\text{V}\)
3. \(({0-24})~\text{V}\)
4. \(({0-8})~\text{V}\)
1. \(({0-12})~\text{V}\)
2. \(({0-5})~\text{V}\)
3. \(({0-24})~\text{V}\)
4. \(({0-8})~\text{V}\)
Subtopic: Applications of PN junction |
Level 4: Below 35%
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The truth table given in the figure below represents:
1. AND gate
2. OR gate
3. NOR gate
4. NAND gate
| A | B | Y |
| 0 | 0 | 0 |
| 0 | 1 | 1 |
| 1 | 0 | 1 |
| 1 | 1 | 1 |
2. OR gate
3. NOR gate
4. NAND gate
Subtopic: Logic gates |
Level 4: Below 35%
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A realistic graph depicting the variation of the reciprocal of input resistance in an input characteristics measurement in a common emitter transistor configuration is:
| 1. |  |
3. |  |
| 2. |  |
4. |  |
Subtopic: Applications of PN junction |
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To get an output of \(Y = 1\) from the circuit shown in the figure, the input must be:
| 1. | \({A=1,~B=1,~C=0}\) | 2. | \({A=1,~B=0,~C=0}\) |
| 3. | \({A=0,~B=0,~C=1} \) | 4. | \({A=1,~B=0,~C=1}\) |
Subtopic: Logic gates |
Level 4: Below 35%
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In the given circuit the current through the Zener diode is:
1. \(3.3~\text{mA}\)
2. \(2.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(6.7~\text{mA}\)
1. \(3.3~\text{mA}\)
2. \(2.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(6.7~\text{mA}\)
Subtopic: Applications of PN junction |
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