The temperature dependence of resistances of \(\mathrm{Cu}\) and undoped \(\mathrm{Si}\) in the temperature range \(300\text-400~\text{K}\), is best described by:

1. Linear increase for \(\mathrm{Cu}\), linear increase for \(\mathrm{Si}\)
2. Linear increase for \(\mathrm{Cu}\), exponential increase for \(\mathrm{Si}\)
3. Linear increase for \(\mathrm{Cu}\), exponential decrease for \(\mathrm{Si}\)
4. Linear decrease for \(\mathrm{Cu}\), linear decrease for \(\mathrm{Si}\)

Subtopic:  Types of Semiconductors |
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If \(a,b,c,\) and \(d\) are inputs to a logic gate and \(x\) is its output, then based on the timing diagram shown below, what type of gate is this?

1. NOT 2. AND
3. OR 4. NAND
Subtopic:  Logic gates |
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Match the semiconductor devices with their corresponding characteristic graphs labeled \(\mathrm{(a),(b),(c)}\) and \(\mathrm{(d)}.\)
   
Select the correct sequence from the options given below:

1. \(\mathrm{(a)}-\)Simple diode; \(\mathrm{(b)}-\)Zener diode; \(\mathrm{(c)}-\)Solar cell; \(\mathrm{(d)}-\)Light-dependent resistance
2. \(\mathrm{(a)}-\)Solar cell; \(\mathrm{(b)}-\)Zener diode; \(\mathrm{(c)}-\)Simple diode; \(\mathrm{(d)}-\)Light-dependent resistance
3. \(\mathrm{(a)}-\)Zener diode; \(\mathrm{(b)}-\)Simple diode; \(\mathrm{(c)}-\)Solar cell; \(\mathrm{(d)}-\)Light-dependent resistance
4. \(\mathrm{(a)}-\)Solar cell; \(\mathrm{(b)}-\)Simple diode; \(\mathrm{(c)}-\)Light-dependent resistance; \(\mathrm{(d)}-\)Zener diode
Subtopic:  Applications of PN junction |
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The forward-biased diode connection is:

1. 2.
3. 4.

Subtopic:  PN junction |
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The Zener diode has a voltage, \(V_z=30~\text{V}.\) The current passing through the diode for the following circuit is:

1. \(3 ~\text{mA}\) 2. \(6 ~\text{mA}\)
3. \(9 ~\text{mA}\) 4. \(12 ~\text{mA}\)
Subtopic:  Applications of PN junction |
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Draw the output signal \(Y\) in the given combination of gates :

   

1.  
2.  
3.  
4.  

Subtopic:  Logic gates |
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Identify the operation performed by the circuit given below:

 

1. \(\text{OR}\)
2. \(\text{NOT}\)
3. \(\text{NAND}\)
4. \(\text{AND}\)

Subtopic:  Logic gates |
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Identify the correct output signal \(Y\) in the given combination of gates (as shown) for the given inputs \(A\) and \(B\) 
                        

1.
2.
3.
4. None of the above

Subtopic:  Logic gates |
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A \(5~\text{V}\) battery is connected across the points \(X\) and \(Y.\) Assume \(D_1\) and \(D_2\) to be normal silicon diodes. Find the current supplied by the battery if the \(+\text{ve}\) terminal of the battery is connected to point \(X. \) [Given: Barrier potential of Silicon = \(0.7~\text{V}\)

 
1. \(0.5~\text{A}\)
2. \(1.5~\text{A}\)
3. \(0.86~\text{A}\)
4. \(0.43~\text{A}\)

Subtopic:  Applications of PN junction |
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Zener breakdown occurs in a \(\mathrm{p\text{-}n}\) junction having \(\mathrm{p}\) and \(\mathrm{n}\) both:

1. lightly doped and have wide depletion layer.
2. heavily doped and have narrow depletion layer.
3. lightly doped and have narrow depletion layer.
4. heavily doped and have wide depletion layer.
Subtopic:  Applications of PN junction |
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