Q. No.A Zener diode, having breakdown voltage equal to \(15\) V, is used in a voltage regulator circuit, as shown in the figure. The current through the diode is:
1. \(10\) mA
2. \(15\) mA
3. \(20\) mA
4. \(5\) mA
1. \(10\) mA
2. \(15\) mA
3. \(20\) mA
4. \(5\) mA
| 1. | the current in the reverse biased condition is generally very small. |
| 2. | the current in the reverse biased condition is small but the forward-biased current is independent of the bias voltage. |
| 3. | the reverse-biased current is strongly dependent on the applied bias voltage. |
| 4. | the forward-biased current is very small in comparison to reverse-biased current. |
| 1. | In the circuit (1) and (2) |
| 2. | In the circuit (2) and (3) |
| 3. | In the circuit (1) and (3) |
| 4. | Only in the circuit (1) |
How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature?
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)
In a good conductor, the energy gap between the conduction band and the valence band is:
1. Infinite
2. Wide
3. Narrow
4. Zero
| 1. | \(10^{17} / \text{m}^3 \) | 2. | \(10^{15} / \text{m}^3 \) |
| 3. | \(10^4 / \text{m}^3 \) | 4. | \(10^2 / \text{m}^3\) |
In a semiconducting material, the mobilities of electrons and holes are \(\mu_e\) and \(\mu_{h}\) respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)
1. \(1.5~\Omega\)
2. \(5~\Omega\)
3. \(6.67~\Omega\)
4. \(200~\Omega\)
© 2026 GoodEd Technologies Pvt. Ltd.