The given graph represents the \(V\text-I\) characteristics of a semiconductor device. Which of the following statements is correct?
 

1. It is a \(V\text-I\) characteristic of a solar cell where the point \(A\) represents open-circuit voltage and the point \(B\) represents short-circuit current.
2. It is for a solar cell and points \(A\) and \(B\) represents open-circuit voltage and current respectively.
3. It is for a photodiode and points \(A\) and \(B\) represents open-circuit voltage and current respectively.
4. It is for an LED and points \(A\) and \(B\) represents open-circuit voltage and short-circuit current respectively.

Subtopic:  Applications of PN junction |
 70%
Level 2: 60%+
NEET - 2014
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Pure \(\mathrm{Si}\) at \(500~\text K\)  has an equal number of electrons \((n_i)\) and the hole \((n_h)\) concentration of \(1.5\times10^{16}~\text{m}^{-3}.\) Doping by indium increases the hole concentration \(n_h\) to \(4.5\times 10^{22}~\text{m}^{-3}.\) The doped semiconductor is of:
1. \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=5\times10^{22}~\text{m}^{-3}\)
2. \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=2.5\times10^{23}~\text{m}^{-3}\)
3. \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=2.5\times10^{10}~\text{m}^{-3}\)
4. \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=5\times10^{9}~\text{m}^{-3}\)
Subtopic:  Types of Semiconductors |
 71%
Level 2: 60%+
NEET - 2011
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A Zener diode, having breakdown voltage equal to \(15\) V, is used in a voltage regulator circuit, as shown in the figure. The current through the diode is:

                      
1. \(10\) mA
2. \(15\) mA
3. \(20\) mA
4. \(5\) mA

Subtopic:  Applications of PN junction |
 63%
Level 2: 60%+
NEET - 2011
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In a \(\mathrm{p\text-n}\) junction diode:
1. the current in the reverse biased condition is generally very small.
2. the current in the reverse biased condition is small but the forward-biased current is independent of the bias voltage.
3. the reverse-biased current is strongly dependent on the applied bias voltage.
4. the forward-biased current is very small in comparison to reverse-biased current.
Subtopic:  PN junction |
 68%
Level 2: 60%+
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Two \(\mathrm{P\text-N}\) junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:

 

1. In the circuit (1) and (2)      
2. In the circuit (2) and (3)
3. In the circuit (1) and (3)       
4. Only in the circuit (1)
Subtopic:  PN junction |
 65%
Level 2: 60%+
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The correct symbol for zener diode is:

1. 2.
3. 4.
Subtopic:  Applications of PN junction |
 90%
Level 1: 80%+
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Which of the following logic gate is a universal gate?
1. OR
2. NOT
3. AND
4. NOR

Subtopic:  Logic gates |
 77%
Level 2: 60%+
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How much is the forbidden gap (approximately) in the energy bands of germanium at room temperature? 
1. \(1.1~\text{eV}\)
2. \(0.1~\text{eV}\)
3. \(0.67~\text{eV}\)
4. \(6.7~\text{eV}\)

Subtopic:  Energy Band theory |
 61%
Level 2: 60%+
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In a good conductor, the energy gap between the conduction band and the valence band is:
1. Infinite
2. Wide
3. Narrow
4. Zero

Subtopic:  Energy Band theory |
 78%
Level 2: 60%+
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A \(Ge\) specimen is doped with \(Al\). The concentration of acceptor atoms is \(\sim10^{21}~\text{atoms/m}^3\). Given that the intrinsic concentration of electron hole pairs is \(\sim10^{19}/\text{m}^3\) the concentration of electrons in the specimen is:
1. \(10^{17} / \text{m}^3 \) 2. \(10^{15} / \text{m}^3 \)
3. \(10^4 / \text{m}^3 \) 4. \(10^2 / \text{m}^3\)
Subtopic:  Types of Semiconductors |
 73%
Level 2: 60%+
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