- 1(current)
Q. No.In an \(\mathrm{n\text-}\)type semiconductor, which of the following statement is true?
| 1. | Electrons are minority carriers and pentavalent atoms are dopants. |
| 2. | Holes are minority carriers and pentavalent atoms are dopants. |
| 3. | Holes are the majority carriers and trivalent atoms are dopants. |
| 4. | Electrons are the majority carriers and trivalent atoms are dopants. |
Subtopic: Â Types of Semiconductors |
 81%
Level 1: 80%+
AIPMT - 2013
Hints
If a small amount of antimony is added to germanium crystal:
| 1. | the antimony becomes an acceptor atom |
| 2. | there will be more free electrons than holes in the semiconductor |
| 3. | its resistance is increased |
| 4. | it becomes a \(p\small{-}\)type semiconductor |
Subtopic: Â Types of Semiconductors |
 83%
Level 1: 80%+
AIPMT - 2011
Hints
Pure Si at \(500~\text{K}\) has an equal number of electron \((n_e)\) and hole \((n_h)\) concentrations of \(1.5\times10^{16}~\text{m}^{-3}\). Doping by indium increases \(n_h\) to \(4.5\times10^{22}~\text{m}^{-3}\). The doped semiconductor is of:
| 1. | \(p\)-type with electron concentration \(n_e=5\times10^9~\text{m}^{-3}\). |
| 2. | \(n\)-type with electron concentration \(n_e=5\times10^{22}~\text{m}^{-3}\). |
| 3. | \(p\)-type with electron concentration \(n_e=2.5\times10^{10}~\text{m}^{-3}\). |
| 4. | \(n\)-type with electron concentration \(n_e=2.5\times10^{23}~\text{m}^{-3}\). |
Subtopic: Â Types of Semiconductors |
 77%
Level 2: 60%+
AIPMT - 2011
Hints
Which one of the following statements is false?
| 1. | Pure Si doped with trivalent impurities gives a p-type semiconductor. |
| 2. | The majority of carriers in an n-type semiconductor are holes. |
| 3. | The minority carriers in a p-type semiconductor are electrons. |
| 4. | The resistance of intrinsic semiconductors decreases with an increase in temperature. |
Subtopic: Â Types of Semiconductors |
 87%
Level 1: 80%+
AIPMT - 2010
Hints
- 1(current)
Q. No.
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