The symbolic representation of four gates is shown as: 
   
Pick out which ones are for AND, NAND, and NOT gates, respectively.

1.  (i), (iv), and (iii)

2.  (ii), (iii), and (iv)

3.  (ii), (iv), and (iii)

4.  (ii), (iv), and (i)

Subtopic:  Logic gates |
 89%
Level 1: 80%+
AIPMT - 2011
Hints

If a small amount of antimony is added to germanium crystal:
 
1. the antimony becomes an acceptor atom
2. there will be more free electrons than holes in the semiconductor
3. its resistance is increased
4. it becomes a \(p\small{-}\)type semiconductor

Subtopic:  Types of Semiconductors |
 84%
Level 1: 80%+
AIPMT - 2011
Hints

In a forward biasing of the p-n junction:
 
1. the positive terminal of the battery is connected to the p-side and the depletion region becomes thick.
2. the negative terminal of the battery is connected to the n-side and the depletion region becomes thin.
3. the positive terminal of the battery is connected to the n-side and the depletion region becomes thin.
4. the negative terminal of the battery is connected to the p-side and the depletion region becomes thick.

Subtopic:  PN junction |
 76%
Level 2: 60%+
AIPMT - 2011
Hints

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Which one of the following statements is false?

1. Pure Si doped with trivalent impurities gives a p-type
semiconductor.
2. The majority of carriers in an n-type semiconductor are holes.
3. The minority carriers in a p-type semiconductor are electrons.
4. The resistance of intrinsic semiconductors decreases with an
increase in temperature.

Subtopic:  Types of Semiconductors |
 87%
Level 1: 80%+
AIPMT - 2010
Hints

To get an output Y = 1 from the circuit shown below, the input must be:

 

1. A=0 B=1 C=0

2. A=0 B=0 C=1

3. A=1 B=0 C=1

4. A=1 B=0 C=0

Subtopic:  Logic gates |
 91%
Level 1: 80%+
AIPMT - 2010
Hints

\(\mathrm{p\text-n}\) photodiode is fabricated from a semiconductor with a band gap of \(2.5~\text{eV}.\) It can detect a signal of wavelength:
1. \(6000~\mathring{A}\)
2. \(4000~\text{nm}\)
3. \(6000~\text{nm}\)
4. \(4000~\mathring{A}\)  
Subtopic:  Energy Band theory |
 64%
Level 2: 60%+
AIPMT - 2009
Hints

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The symbolic representation of four logic gates is as shown:

(i) (ii)
(ii) (iv)



The logic symbols for OR, NOT, and NAND gates are respectively:
1. (iii), (iv), (ii)
2. (iv), (i), (iii)
3. (iv), (ii), (i)
4. (i), (iii), (iv)

Subtopic:  Logic gates |
 92%
Level 1: 80%+
AIPMT - 2009
Hints

A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:

1. 10×1014 Hz

2. 5×1014 Hz

3. 1×1014 Hz

4. 20×1014 Hz

Subtopic:  Energy Band theory | Applications of PN junction |
 82%
Level 1: 80%+
AIPMT - 2008
Hints

The circuit is equivalent to: 
     

1. AND gate
2. NAND gate
3. NOR gate
4. OR gate

Subtopic:  Logic gates |
 77%
Level 2: 60%+
AIPMT - 2008
Hints

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In the following circuit, the output \(Y\) for all possible inputs \(A\) and \(B\) is expressed by the truth table: 
    

1. A B Y 2. A B Y
0 0 0 0 0 1
0 1 0 0 1 1
1 0 0 1 0 1
1 1 1 1 1 0
3. 0 0 1 4. 0 0 0
0 1 0 0 1 1
1 0 0 1 0 1
1 1 1 1 1 1
Subtopic:  Logic gates |
 77%
Level 2: 60%+
AIPMT - 2007
Hints