Different voltages are applied across a P-N junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current?

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
From NCERT
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If the following input signal is sent through a PN-junction diode, then the output signal across RL will be

 

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
 82%
From NCERT
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The curve between charge density and distance near P-N junction will be

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
From NCERT
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The resistance of a germanium junction diode whose is shown in figure is Vk=0.3V


(1) 5 kΩ

(2) 0.2 kΩ

(3) 2.3 kΩ

(4) 102.3

Subtopic:  PN junction |
 71%
From NCERT
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In the half-wave rectifier circuit shown. Which one of the following wave forms is true for VCD, the output across C and D?

1. 

2. 

3. 

4. 

Subtopic:  Rectifier |
 87%
From NCERT
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A full-wave rectifier circuit along with the input and output voltages is shown in the figure.

The contribution to the output voltage from diode – 2 is :

(1) A, C                       

(2) B, D

(3) B, C                       

(4) A, D

Subtopic:  Rectifier |
 86%
From NCERT
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The i-V characteristic of a P-N junction diode is shown below. The approximate dynamic resistance of the P-N junction when a forward bias of 2 volt is applied

(1) 1 Ω

(2) 0.25 Ω 

(3) 0.5 Ω

(4) 5 Ω

Subtopic:  PN junction |
 65%
From NCERT
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The given figure shows the wave forms for two inputs A and B and that for the output Y of a logic circuit. The logic circuit is 

(1) An AND gate                   

(2) An OR gate

(3) A NAND gate                   

(4) An NOT gate

Subtopic:  Logic gates |
 86%
From NCERT
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The variation of anode current in a triode corresponding to a change in grid potential at three different values of the plate potential is shown in the diagram. The mutual conductance of the triode is 

           

1.  2.5 m mho 
2.  5.0 m mho
3.  7.5 m mho     
4.  10.0 m mho

Subtopic:  Transistor (OLD NCERT) |
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A silicon specimen is made into a P-type semi-conductor by dopping, on an average, one Indium atom per 5×107 silicon atoms. If the number density of atoms in the silicon specimen is 5×1028 atoms/m3 then the number of acceptor atoms in silicon per cubic centimeter will be:

(1) 2.5×1030 atoms/cm3                  

(2) 1.0×1013 atoms/cm3

(3) 1.0×1015 atoms/cm3                   

(4) 2.5×1036 atoms/cm3

Subtopic:  Types of Semiconductors |
 59%
From NCERT
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