The output (x) of logic circuit shown in figure will be 

 

(1) X=A=·B=

(2) X=A.B¯

(3)X=A·B

(4)X=A+B¯

Subtopic:  Logic gates |
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C and Si both have same lattice structure,having 4 bonding electrons in each.However, C is insulator whereas Si is intrinsic semiconductor. This is because 

1. in case of C, the valence band is not completely filled at absolute zero temperature

2. in case of C,the condition band is partly filled even at absolute zero temperature 

3. the four bonding electrons in the case of C lie in the second orbit,Whereas in the case of Si they lie in the third

4 .the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit

Subtopic:  Types of Semiconductors |
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The figure shows a logic circuit with two inputs A and B and the output C.The voltage wave forms across A, B and C are as given.The logic circuit gate is 

1. OR gate                                          2. NOR gate

3. AND gate                                        4. NAND gate

Subtopic:  Logic gates |
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The input resistance of a silicon transistor is

100 Ω. Base current is changed by 40 μA

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 kΩ.

The voltage gain of the amplifier is

1. 2000

2. 3000

3. 4000

4. 1000

Subtopic:  Transistor (OLD NCERT) |
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Symbolic representation of four logic gates

are shown as

(i) 

(ii) 

(iii) 

(iv) 

Pick out which ones are for AND, NAND and 

NOT gates, respectively.

(a) (iii), (ii)and (i)

(b) (iii), (ii) and (iv)

(c) (ii), (iv) and (iii)

(d) (ii), (iii) and (iv)

Subtopic:  Logic gates |
 91%
From NCERT
NEET - 2011
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If a small amount of antimony is added to germanium crystal

(1) the antimony becomes an acceptor atom

(2) there will be more free electrons than holes in the semiconductor

(3) its resistance is increased

(4) it becomes a p-type semiconductor

Subtopic:  Types of Semiconductors |
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In forward biasing of the p-n junction 

1. the positive terminal of the battery is connected to n-side and the depletion region becomes thin
2. the positive terminal of the battery is connected to n-side and the depletion region becomes thick
3. the positive terminal of the battery is connected to p-side and the depletion region becomes thin
4. the positive terminal of the battery is connected to p-side and the depletion region becomes thick
Subtopic:  PN junction |
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In the following figure, the diodes which are forward biased, are

                                                                    

                                                                  

1.  III and IV only

2.  I and III only

3.  II only

4.  II and IV only

Subtopic:  PN junction |
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Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentration of 1.5×1016 m-3. Doping by indium increases nh to 4.5×1022 m-3. The doped semiconductor is of:

1. n-type with electron concentration \(n_{e}=5\times10^{22}~m^{-3}\)
2. p-type with electron concentration \(n_{e}=2.5\times10^{23}~m^{-3}\)
3. n-type with electron concentration \(n_{e}=2.5\times10^{10}~m^{-3}\)
4. p-type with electron concentration \(n_{e}=5\times10^{9}~m^{-3}\)
Subtopic:  Types of Semiconductors |
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A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit, as shown in the figure. The current through the diode is:

                      

1. 10 mA

2. 15 mA

3. 20 mA

4. 5 mA

Subtopic:  Applications of PN junction |
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