If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across RL will be:
              

1. 2.
3. 4.

Subtopic:  Rectifier |
 66%
From NCERT
NEET - 2015
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In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be


1. 30mA

2. 40mA

3. 20mA

4. 35mA

Subtopic:  PN junction |
 71%
From NCERT
NEET - 2015
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The given graph represents the V-I characteristic for a semiconductor device. Which of the following statement is correct?

1. It is a V-I characteristic for a solar cell where point A represents open-circuit voltage and point B represents short-circuit current.
2. It is for a solar cell and points A and B represent open-circuit voltage and current respectively.
3. It is for a photodiode and points A and B represent open-circuit voltage and current respectively.
4. It is for a LED and points A and B represent open-circuit voltage and short circuit current respectively.
Subtopic:  Applications of PN junction |
 68%
From NCERT
NEET - 2014
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The barrier potential of a p-n junction depends on

(i)type of semiconductor material

(ii)amount of doping

(iii)temperature

Which one of the following is correct

1. (i) and (ii)only

2. (ii) only

3. (ii) and (iii)only

4. (i),(ii) and (iii)

Subtopic:  PN junction |
 75%
From NCERT
NEET - 2014
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The output (x) of logic circuit shown in figure will be 

 

(1) X=A=·B=

(2) X=A.B¯

(3)X=A·B

(4)X=A+B¯

Subtopic:  Logic gates |
 66%
From NCERT
NEET - 2013
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C and Si both have same lattice structure,having 4 bonding electrons in each.However, C is insulator whereas Si is intrinsic semiconductor. This is because 

1. in case of C, the valence band is not completely filled at absolute zero temperature

2. in case of C,the condition band is partly filled even at absolute zero temperature 

3. the four bonding electrons in the case of C lie in the second orbit,Whereas in the case of Si they lie in the third

4 .the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit

Subtopic:  Types of Semiconductors |
 70%
From NCERT
NEET - 2012
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The figure shows a logic circuit with two inputs A and B and the output C.The voltage wave forms across A, B and C are as given.The logic circuit gate is 

1. OR gate                                          2. NOR gate

3. AND gate                                        4. NAND gate

Subtopic:  Logic gates |
 77%
From NCERT
NEET - 2012
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The input resistance of a silicon transistor is

100 Ω. Base current is changed by 40 μA

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 kΩ.

The voltage gain of the amplifier is

1. 2000

2. 3000

3. 4000

4. 1000

Subtopic:  Transistor (OLD NCERT) |
 81%
From NCERT
NEET - 2012
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Symbolic representation of four logic gates

are shown as

(i) 

(ii) 

(iii) 

(iv) 

Pick out which ones are for AND, NAND and 

NOT gates, respectively.

(a) (iii), (ii)and (i)

(b) (iii), (ii) and (iv)

(c) (ii), (iv) and (iii)

(d) (ii), (iii) and (iv)

Subtopic:  Logic gates |
 91%
From NCERT
NEET - 2011
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If a small amount of antimony is added to germanium crystal

(1) the antimony becomes an acceptor atom

(2) there will be more free electrons than holes in the semiconductor

(3) its resistance is increased

(4) it becomes a p-type semiconductor

Subtopic:  Types of Semiconductors |
 78%
From NCERT
NEET - 2011
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